Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13486614Application Date: 2012-06-01
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Publication No.: US08970016B2Publication Date: 2015-03-03
- Inventor: Marina Antoniou , Florin Udrea , Elizabeth Kho Ching Tee , Steven John Pilkington , Deb Kumar Pal , Alexander Dietrich Hölke
- Applicant: Marina Antoniou , Florin Udrea , Elizabeth Kho Ching Tee , Steven John Pilkington , Deb Kumar Pal , Alexander Dietrich Hölke
- Applicant Address: DE
- Assignee: X-FAB Semiconductor Foundries AG
- Current Assignee: X-FAB Semiconductor Foundries AG
- Current Assignee Address: DE
- Agency: Thompson Hine L.L.P.
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
A semiconductor device including a p or p+ doped portion and an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion. The device further includes at least one termination portion provided adjacent to the drift portion. The at least one termination portion comprises a Super Junction structure.
Public/Granted literature
- US20130320511A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-12-05
Information query
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