发明授权
- 专利标题： Extending metal traces in bump-on-trace structures
- 专利标题（中）： 在痕迹结构中扩展金属痕迹
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申请号： US13035586申请日： 2011-02-25
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公开(公告)号： US08970033B2公开(公告)日： 2015-03-03
- 发明人: Yu-Feng Chen , Yuh Chern Shieh , Tsung-Shu Lin , Han-Ping Pu , Jiun Yi Wu , Tin-Hao Kuo
- 申请人： Yu-Feng Chen , Yuh Chern Shieh , Tsung-Shu Lin , Han-Ping Pu , Jiun Yi Wu , Tin-Hao Kuo
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/498
- IPC分类号： H01L23/498 ; H01L23/00
摘要：
A device includes a work piece, and a metal trace on a surface of the work piece. A Bump-on-Trace (BOT) is formed at the surface of the work piece. The BOT structure includes a metal bump, and a solder bump bonding the metal bump to a portion of the metal trace. The metal trace includes a metal trace extension not covered by the solder bump.
公开/授权文献
- US20120217632A1 Extending Metal Traces in Bump-on-Trace Structures 公开/授权日：2012-08-30
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