Invention Grant
US08974678B2 Methods using block co-polymer self-assembly for sub-lithographic patterning
有权
使用嵌段共聚物自组装方法进行亚光刻图案化
- Patent Title: Methods using block co-polymer self-assembly for sub-lithographic patterning
- Patent Title (中): 使用嵌段共聚物自组装方法进行亚光刻图案化
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Application No.: US13912800Application Date: 2013-06-07
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Publication No.: US08974678B2Publication Date: 2015-03-10
- Inventor: Dan Millward
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; B81C1/00 ; C23F1/02 ; B82Y10/00 ; B82Y30/00 ; B82Y40/00 ; G03F7/00 ; H01L21/027 ; H01L21/308 ; B05D3/00 ; B05D5/00
Abstract:
Block copolymers can be self-assembled and used in methods as described herein for sub-lithographic patterning, for example. The block copolymers can be diblock copolymers, triblock copolymers, multiblock copolymers, or combinations thereof. Such methods can be useful for making devices that include, for example, sub-lithographic conductive lines.
Public/Granted literature
- US20130270226A1 Methods Using Block Co-Polymer Self-Assembly for Sub-Lithographic Patterning Public/Granted day:2013-10-17
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