A method for producing an optoelectronic device is provided, in which a luminescent diode chip (10) is mounted on a base surface (8) on the first terminal area (1) of a carrier (3). An electrically insulating layer (4) is applied to side faces (17) of the luminescent diode chip (10). An electrically conductive layer (5), which leads from a second terminal contact (12) of the luminescent diode chip (10) over the electrically insulating layer (4) to a second terminal area (2) on the carrier (3), is subsequently applied. A photoresist layer (7) is applied to the electrically conductive layer (5), which photoresist layer (7) is exposed by application of an electrical voltage to the luminescent diode chip (10) so that the luminescent diode chip (10) emits radiation (23). After development of the photoresist layer (7), a portion of the electrically conductive layer (5) arranged on the radiation exit surface (9) is removed by means of an etching process, in which the photoresist layer (7) serves as a mask.