Invention Grant
- Patent Title: Low temperature ceramic Microelectromechanical structures
- Patent Title (中): 低温陶瓷微机电结构
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Application No.: US14185160Application Date: 2014-02-20
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Publication No.: US08975104B2Publication Date: 2015-03-10
- Inventor: Mourad El-Gamal , Frederic Nabki , Paul-Vahe Cicek
- Applicant: The Royal Institution for the Advancement of Learning/McGill University
- Applicant Address: CA Montreal
- Assignee: The Royal Institution for the Advancement of Learning/McGill University
- Current Assignee: The Royal Institution for the Advancement of Learning/McGill University
- Current Assignee Address: CA Montreal
- Agency: The Law Office of Michael E. Kondoudis
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/14 ; B81C1/00 ; B81B3/00 ; B81B7/00

Abstract:
A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience while also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.
Public/Granted literature
- US20150008788A1 LOW TEMPERATURE CERAMIC MICROELECTROMECHANICAL STRUCTURES Public/Granted day:2015-01-08
Information query
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