Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14204988Application Date: 2014-03-11
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Publication No.: US08975120B2Publication Date: 2015-03-10
- Inventor: Naoto Taoka , Atsushi Nakamura , Naozumi Morino , Toshikazu Ishikawa , Nobuhiro Kinoshita
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2009-130804 20090529
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/56 ; H01L23/31 ; H01L23/522 ; H01L23/528 ; H01L25/065 ; H01L25/18

Abstract:
The reliability of a semiconductor device is to be improved. A microcomputer chip (semiconductor chip) having a plurality of pads formed on a main surface thereof is mounted over an upper surface of a wiring substrate in an opposed state of the chip main surface to the substrate upper surface. Pads coupled to a plurality of terminals (bonding leads) formed over the substrate upper surface comprise a plurality of first pads in which a unique electric current different from the electric current flowing through other pads flows and a plurality of second pads in which an electric current common to the pads flows or does not flow. Another first pad of the first pads or one of the second pads are arranged next to the first pad. The first pads are electrically coupled to a plurality of bonding leads respectively via a plurality of bumps (first conductive members), while the second pads are bonded to the terminals via a plurality of bumps (second conductive members).
Public/Granted literature
- US20140193954A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2014-07-10
Information query
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