发明授权
- 专利标题： Thin film metal oxynitride semiconductors
- 专利标题（中）： 薄膜金属氧氮化物半导体
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申请号： US12049017申请日： 2008-03-14
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公开(公告)号： US08980066B2公开(公告)日： 2015-03-17
- 发明人: Yan Ye
- 申请人： Yan Ye
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; C23C14/00 ; C23C14/06 ; H01J37/34 ; H01L21/02 ; H01L29/26 ; H01L31/18 ; H01L31/20 ; H01L29/786
摘要：
The present invention generally relates to a semiconductor film and a method of depositing the semiconductor film. The semiconductor film comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin. Additionally, the semiconductor film may be doped. The semiconductor film may be deposited by applying an electrical bias to a sputtering target comprising the one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin, and introducing a nitrogen containing gas and an oxygen containing gas. The sputtering target may optionally be doped. The semiconductor film has a mobility greater than amorphous silicon. After annealing, the semiconductor film has a mobility greater than polysilicon.
公开/授权文献
- US20090233424A1 THIN FILM METAL OXYNITRIDE SEMICONDUCTORS 公开/授权日：2009-09-17
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