发明授权
US08980072B2 Method and arrangement for redundant anode sputtering having a dual anode arrangement
有权
具有双重阳极布置的冗余阳极溅射的方法和装置
- 专利标题: Method and arrangement for redundant anode sputtering having a dual anode arrangement
- 专利标题(中): 具有双重阳极布置的冗余阳极溅射的方法和装置
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申请号: US12679736申请日: 2008-09-25
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公开(公告)号: US08980072B2公开(公告)日: 2015-03-17
- 发明人: Goetz Teschner , Enno Mirring , Johannes Struempfel , Andreas Heisig
- 申请人: Goetz Teschner , Enno Mirring , Johannes Struempfel , Andreas Heisig
- 申请人地址: DE Dresden
- 专利权人: VON ARDENNE Anlagentechnik GmbH
- 当前专利权人: VON ARDENNE Anlagentechnik GmbH
- 当前专利权人地址: DE Dresden
- 代理机构: Heslin Rothenberg Farley & Mesiti P.C.
- 优先权: DE102007045863 20070925
- 国际申请: PCT/EP2008/062881 WO 20080925
- 国际公布: WO2009/040406 WO 20090402
- 主分类号: C23C14/00
- IPC分类号: C23C14/00 ; H01J37/34 ; C23C14/34 ; C23C14/56
摘要:
In a method in which two anodes are operated alternately opposite each other as plasma discharge anodes and as cathodes for self-cleaning, and the cathodes of the plasma discharge are recurrently briefly reversed in polarity, and an arrangement comprising a cathode and a first and a second anode supplied with voltage by an H-bridge circuit, pole reversal of cathode voltage is effected by a pulse current supply, at least one anode is maintained at positive potential at all times and the other anode intermittently at negative potential during an etching time, and the H-bridge circuit is operationally connected to the pulse current supply, such that at least one anode is at positive potential at all times.
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