发明授权
- 专利标题： Semiconductor device and manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件及半导体器件的制造方法
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申请号： US13368930申请日： 2012-02-08
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公开(公告)号： US08980671B2公开(公告)日： 2015-03-17
- 发明人: Satoshi Hongo , Kazumasa Tanida , Akihiro Hori , Kenji Takahashi , Hideo Numata
- 申请人： Satoshi Hongo , Kazumasa Tanida , Akihiro Hori , Kenji Takahashi , Hideo Numata
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2011-038439 20110224
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/30 ; H01L21/46 ; H01L27/146 ; H01L21/84 ; H01L27/12
摘要：
A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.