公开(公告)号：US08980671B2

公开(公告)日：2015-03-17

申请号：US13368930

申请日：2012-02-08

申请人： Satoshi Hongo ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

发明人： Satoshi Hongo ,  Kazumasa Tanida ,  Akihiro Hori ,  Kenji Takahashi ,  Hideo Numata

IPC分类号： H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L27/146 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L27/1464 ,  H01L21/84 ,  H01L27/1203 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1469

摘要： A manufacturing method of a semiconductor device according to embodiments includes forming a photodiode layer, which is an active region including a photodiode, on a main surface of a first substrate, forming a wiring layer, which includes a wire and a dielectric layer covering the wire, on the photodiode layer, and forming a dielectric film on the wiring layer. The manufacturing method of the semiconductor device according to the embodiments further includes bonding a second substrate to the dielectric film of the first substrate so that a crystal orientation of the photodiode layer matches a crystal orientation of the second substrate.

摘要翻译： 根据实施例的半导体器件的制造方法包括在第一衬底的主表面上形成作为包括光电二极管的有源区的光电二极管层，形成布线层，其包括线和覆盖线的介电层 在光电二极管层上，并在布线层上形成电介质膜。 根据实施例的半导体器件的制造方法还包括将第二衬底接合到第一衬底的电介质膜，使得光电二极管层的晶体取向与第二衬底的晶体取向相匹配。

公开(公告)号：US20120190138A1

公开(公告)日：2012-07-26

申请号：US13354734

申请日：2012-01-20

申请人： Kazumasa TANIDA ,  Satoshi Hongo ,  Naoko Yamaguchi ,  Kenji Takahashi ,  Hideo Numata

发明人： Kazumasa TANIDA ,  Satoshi Hongo ,  Naoko Yamaguchi ,  Kenji Takahashi ,  Hideo Numata

IPC分类号： H01L21/66 ,  B32B37/30 ,  B32B41/00

CPC分类号： H01L21/681 ,  H01L21/67092 ,  H01L21/6838 ,  H01L27/1464

摘要： According to one embodiment, semiconductor manufacturing apparatus includes a first member that holds a first semiconductor substrate; a second member that holds a second semiconductor substrate in a state where a bonding surface of the second semiconductor substrate faces a bonding surface of the first semiconductor substrate; a distance detecting unit that detects a distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate; an adjusting unit that adjusts the distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate to a predetermined value by moving at least one of the first and second members based on a detection result of the distance detecting unit; and a third member that forms the bonding start point between the first semiconductor substrate and the second semiconductor substrate.

摘要翻译： 根据一个实施例，半导体制造装置包括保持第一半导体衬底的第一构件; 第二构件，其在第二半导体衬底的接合表面面对第一半导体衬底的接合表面的状态下保持第二半导体衬底; 距离检测单元，其检测第一半导体衬底的接合表面和第二半导体衬底的接合表面之间的距离; 调整单元，其基于所述距离检测单元的检测结果，通过移动所述第一和第二构件中的至少一个来调整所述第一半导体衬底的接合表面与所述第二半导体衬底的接合表面之间的距离为预定值 ; 以及在第一半导体衬底和第二半导体衬底之间形成接合起始点的第三构件。

公开(公告)号：US08822307B2

公开(公告)日：2014-09-02

申请号：US13422966

申请日：2012-03-16

申请人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

发明人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

IPC分类号： H01L21/762 ,  B32B37/10 ,  B32B38/18 ,  H01L21/67

CPC分类号： H01L21/76251 ,  H01L21/67092 ,  Y10T156/1744

摘要： According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.

摘要翻译： 根据一个实施例，提供一种半导体制造装置。 半导体制造装置包括台，基板支撑件，第一和第二推动器以及控制器。 该台被配置为从下方支撑第一半导体衬底的外围部分。 衬底支撑件构造成保持第二半导体衬底的背面。 第一和第二推动器构造成使第一和第二半导体衬底接触。 控制器被配置为在第一和第二半导体衬底之间形成接合起始点。

公开(公告)号：US20120329241A1

公开(公告)日：2012-12-27

申请号：US13422966

申请日：2012-03-16

申请人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

发明人： Naoko Yamaguchi ,  Kazumasa Tanida ,  Hideo Numata ,  Satoshi Hongo ,  Kenji Takahashi

IPC分类号： B32B37/10 ,  B32B38/18 ,  H01L21/762

CPC分类号： H01L21/76251 ,  H01L21/67092 ,  Y10T156/1744

摘要： According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.

摘要翻译： 根据一个实施例，提供一种半导体制造装置。 半导体制造装置包括台，基板支撑件，第一和第二推动器以及控制器。 该台被配置为从下方支撑第一半导体衬底的外围部分。 衬底支撑件构造成保持第二半导体衬底的背面。 第一和第二推动器构造成使第一和第二半导体衬底接触。 控制器被配置为在第一和第二半导体衬底之间形成接合起始点。

公开(公告)号：US08778778B2

公开(公告)日：2014-07-15

申请号：US13212644

申请日：2011-08-18

申请人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Tsuyoshi Matsumura ,  Hideo Numata ,  Mari Otsuka ,  Naoko Yamaguchi ,  Takashi Shirono ,  Satoshi Hongo

发明人： Kazumasa Tanida ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Tsuyoshi Matsumura ,  Hideo Numata ,  Mari Otsuka ,  Naoko Yamaguchi ,  Takashi Shirono ,  Satoshi Hongo

IPC分类号： H01L21/77

CPC分类号： H01L27/1464 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

摘要翻译： 根据实施例，在半导体衬底的第一表面上形成有源层，在有源层上形成布线层，并且覆盖布线层形成绝缘层。 半导体衬底的第一表面经由绝缘层接合到支撑衬底，并且结合到支撑衬底的半导体衬底被薄化，从第二表面离开具有预定厚度的半导体衬底覆盖有源层。 去除减薄的半导体衬底的面积的至少一部分以暴露活性层。

公开(公告)号：US20120049312A1

公开(公告)日：2012-03-01

申请号：US13212644

申请日：2011-08-18

申请人： Kazumasa TANIDA ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Tsuyoshi Matsumura ,  Hideo Numata ,  Mari Otsuka ,  Naoko Yamaguchi ,  Takashi Shirono ,  Satoshi Hongo

发明人： Kazumasa TANIDA ,  Masahiro Sekiguchi ,  Masayuki Dohi ,  Tsuyoshi Matsumura ,  Hideo Numata ,  Mari Otsuka ,  Naoko Yamaguchi ,  Takashi Shirono ,  Satoshi Hongo

IPC分类号： H01L27/146 ,  H01L29/06 ,  H01L21/30

CPC分类号： H01L27/1464 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

摘要： According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

摘要翻译： 根据实施例，在半导体衬底的第一表面上形成有源层，在有源层上形成布线层，并且覆盖布线层形成绝缘层。 半导体衬底的第一表面经由绝缘层接合到支撑衬底，并且结合到支撑衬底的半导体衬底被薄化，从第二表面离开具有预定厚度的半导体衬底覆盖有源层。 去除减薄的半导体衬底的面积的至少一部分以暴露活性层。

公开(公告)号：US20110304003A1

公开(公告)日：2011-12-15

申请号：US13152057

申请日：2011-06-02

申请人： Kazumasa Tanida ,  Naoko Yamaguchi ,  Satoshi Hongo ,  Hideo Numata

发明人： Kazumasa Tanida ,  Naoko Yamaguchi ,  Satoshi Hongo ,  Hideo Numata

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14618 ,  H01L27/14687 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H04N5/2253 ,  H04N5/2254 ,  H01L2924/00014

摘要： According to the embodiments, a semiconductor substrate, an active layer that is formed on one surface of the semiconductor substrate, a wiring layer that is formed on the active layer and includes a wire to be a convex portion on a surface that is not in contact with the active layer, a insulation layer that is formed on the wiring layer to have a concave portion, an embedded layer that is provided on the concave portion of the insulation layer, a bonding layer that is provided on the insulation layer and the embedded layer, and a substrate that is bonded to the bonding layer to face one surface of the semiconductor substrate are included.

摘要翻译： 根据实施例，半导体衬底，形成在半导体衬底的一个表面上的有源层，形成在有源层上并且在不接触的表面上包括作为凸部的线的布线层 在所述有源层上形成有在所述布线层上具有凹部的绝缘层，设置在所述绝缘层的凹部的嵌入层，设置在所述绝缘层和所述嵌入层上的接合层 并且包括结合到接合层以面向半导体衬底的一个表面的衬底。

公开(公告)号：US08309430B2

公开(公告)日：2012-11-13

申请号：US13035182

申请日：2011-02-25

申请人： Kazumasa Tanida ,  Naoko Yamaguchi ,  Satoshi Hongo ,  Chiaki Takubo ,  Hideo Numata

发明人： Kazumasa Tanida ,  Naoko Yamaguchi ,  Satoshi Hongo ,  Chiaki Takubo ,  Hideo Numata

IPC分类号： H01L21/30 ,  B32B37/00 ,  B32B41/00

CPC分类号： B23P19/00 ,  Y10T29/5313 ,  Y10T156/10 ,  Y10T156/1744

摘要： According to one embodiment, a first substrate and a second substrate are pressed from an opposite surface of a joint surface of the second substrate such that a joint surface of the first substrate and the joint surface of the second substrate are in contact with each other. The second substrate is restrained by a member to provide a gap between the joint surfaces. It is determined, based on a temporal change of a joint interface calculated based on an image imaged from the opposite surface side of the joint surface, whether joining is normally performed.

摘要翻译： 根据一个实施例，第一基板和第二基板从第二基板的接合表面的相对表面被按压，使得第一基板的接合表面和第二基板的接合表面彼此接触。 第二基板被构件约束以在接合表面之间提供间隙。 基于基于从接合面的相对面侧成像的图像计算的接合界面的时间变化，确定是否正常进行接合。

公开(公告)号：US20110217795A1

公开(公告)日：2011-09-08

申请号：US13035182

申请日：2011-02-25

申请人： Kazumasa TANIDA ,  Naoko Yamaguchi ,  Satoshi Hongo ,  Chiaki Takubo ,  Hideo Numata

发明人： Kazumasa TANIDA ,  Naoko Yamaguchi ,  Satoshi Hongo ,  Chiaki Takubo ,  Hideo Numata

IPC分类号： H01L21/66 ,  B23P19/00

CPC分类号： B23P19/00 ,  Y10T29/5313 ,  Y10T156/10 ,  Y10T156/1744

摘要： According to one embodiment, a first substrate and a second substrate are pressed from an opposite surface of a joint surface of the second substrate such that a joint surface of the first substrate and the joint surface of the second substrate are in contact with each other. The second substrate is restrained by a member to provide a gap between the joint surfaces. It is determined, based on a temporal change of a joint interface calculated based on an image imaged from the opposite surface side of the joint surface, whether joining is normally performed.

摘要翻译： 根据一个实施例，第一基板和第二基板从第二基板的接合表面的相对表面被按压，使得第一基板的接合表面和第二基板的接合表面彼此接触。 第二基板被构件约束以在接合表面之间提供间隙。 基于基于从接合面的相对面侧成像的图像计算的接合界面的时间变化，确定是否正常进行接合。

公开(公告)号：US09004337B2

公开(公告)日：2015-04-14

申请号：US13479968

申请日：2012-05-24

申请人： Satoshi Hongo ,  Kenji Takahashi ,  Kazumasa Tanida

发明人： Satoshi Hongo ,  Kenji Takahashi ,  Kazumasa Tanida

IPC分类号： B31B1/68 ,  H01L21/20 ,  H01L21/67 ,  H01L21/762

CPC分类号： H01L21/2007 ,  H01L21/67092 ,  H01L21/76251 ,  Y10T29/413

摘要： According to one embodiment, a system for manufacturing a semiconductor device includes a spontaneous joining unit and a deformative joining unit. The spontaneous joining unit overlaps a first substrate and a second substrate and spontaneously joins mutual center portions of respective joint faces of the first substrate and the second substrate. The deformative joining unit deforms at least one peripheral portion of the respective joint faces of the first substrate and second substrate joined by the spontaneous joining unit toward the other peripheral portion and joins the mutual peripheral portions of the respective joint faces.

摘要翻译： 根据一个实施例，一种用于制造半导体器件的系统包括自发接合单元和变形接合单元。 自发接合单元与第一基板和第二基板重叠，并且自发地接合第一基板和第二基板的各个接合面的相互中心部分。 变形接合单元使由第一基板和第二基板的各个接合面的至少一个周边部分朝向另一个周边部分变形，并且连接各个接合面的相互的周边部分。