发明授权
- 专利标题: Semiconductor device manufacturing method
- 专利标题(中): 半导体器件制造方法
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申请号: US14156671申请日: 2014-01-16
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公开(公告)号: US08980692B2公开(公告)日: 2015-03-17
- 发明人: Kenichi Sasaki , Norio Fukasawa
- 申请人: Fujitsu Semiconductor Limited
- 申请人地址: JP Yokohama
- 专利权人: Fujitsu Semiconductor Limited
- 当前专利权人: Fujitsu Semiconductor Limited
- 当前专利权人地址: JP Yokohama
- 代理机构: Westerman, Hattori, Daniels & Adrian, LLP
- 优先权: JP2011-170422 20110803
- 主分类号: H01L21/82
- IPC分类号: H01L21/82 ; H01L23/00 ; H01L25/065 ; H01L23/495 ; H01L23/498
摘要:
A semiconductor device includes a circuit substrate, a first semiconductor chip disposed on the circuit substrate, a plurality of first spacers disposed on the first semiconductor chip, a second semiconductor chip which includes a first adhesive agent layer on a lower face thereof and is disposed on upper portions of the plurality of spacers, a wire which connects the circuit substrate to the first semiconductor chip, and a first sealing material which seals a gap between the first semiconductor chip and the first adhesive agent layer, wherein each height of the plurality of the first spacers is greater than height of the wire relative to an upper face of the first semiconductor chip.
公开/授权文献
- US20140187000A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 公开/授权日:2014-07-03
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