公开(公告)号：US20140187000A1

公开(公告)日：2014-07-03

申请号：US14156671

申请日：2014-01-16

申请人： FUJITSU SEMICONDUCTOR LIMITED

发明人： Kenichi Sasaki ,  Norio Fukasawa

IPC分类号： H01L23/00

CPC分类号： H01L24/80 ,  H01L23/495 ,  H01L23/49575 ,  H01L23/49811 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/81 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/0614 ,  H01L2224/06177 ,  H01L2224/1134 ,  H01L2224/13082 ,  H01L2224/16145 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81395 ,  H01L2224/8149 ,  H01L2224/81901 ,  H01L2224/8592 ,  H01L2224/92163 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device includes a circuit substrate, a first semiconductor chip disposed on the circuit substrate, a plurality of first spacers disposed on the first semiconductor chip, a second semiconductor chip which includes a first adhesive agent layer on a lower face thereof and is disposed on upper portions of the plurality of spacers, a wire which connects the circuit substrate to the first semiconductor chip, and a first sealing material which seals a gap between the first semiconductor chip and the first adhesive agent layer, wherein each height of the plurality of the first spacers is greater than height of the wire relative to an upper face of the first semiconductor chip.

摘要翻译： 半导体器件包括电路基板，布置在电路基板上的第一半导体芯片，设置在第一半导体芯片上的多个第一间隔物，第二半导体芯片，其下表面上包括第一粘合剂层， 多个间隔物的上部，将电路基板连接到第一半导体芯片的线以及密封第一半导体芯片和第一粘合剂层之间的间隙的第一密封材料，其中， 第一间隔物相对于第一半导体芯片的上表面大于导线的高度。

公开(公告)号：US08980692B2

公开(公告)日：2015-03-17

申请号：US14156671

申请日：2014-01-16

申请人： Fujitsu Semiconductor Limited

发明人： Kenichi Sasaki ,  Norio Fukasawa

IPC分类号： H01L21/82 ,  H01L23/00 ,  H01L25/065 ,  H01L23/495 ,  H01L23/498

CPC分类号： H01L24/80 ,  H01L23/495 ,  H01L23/49575 ,  H01L23/49811 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/81 ,  H01L24/85 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/0614 ,  H01L2224/06177 ,  H01L2224/1134 ,  H01L2224/13082 ,  H01L2224/16145 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/81191 ,  H01L2224/81395 ,  H01L2224/8149 ,  H01L2224/81901 ,  H01L2224/8592 ,  H01L2224/92163 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor device includes a circuit substrate, a first semiconductor chip disposed on the circuit substrate, a plurality of first spacers disposed on the first semiconductor chip, a second semiconductor chip which includes a first adhesive agent layer on a lower face thereof and is disposed on upper portions of the plurality of spacers, a wire which connects the circuit substrate to the first semiconductor chip, and a first sealing material which seals a gap between the first semiconductor chip and the first adhesive agent layer, wherein each height of the plurality of the first spacers is greater than height of the wire relative to an upper face of the first semiconductor chip.

摘要翻译： 半导体器件包括电路基板，布置在电路基板上的第一半导体芯片，设置在第一半导体芯片上的多个第一间隔物，第二半导体芯片，其下表面上包括第一粘合剂层， 多个间隔物的上部，将电路基板连接到第一半导体芯片的线以及密封第一半导体芯片和第一粘合剂层之间的间隙的第一密封材料，其中， 第一间隔物相对于第一半导体芯片的上表面大于导线的高度。