Invention Grant
US08981335B2 ZnTe on TiN or Pt electodes with a portion operable as a current limiting layer for ReRAM applications
有权
ZnTe在TiN或Pt电极上，其一部分可用作ReRAM应用的限流层
- Patent Title: ZnTe on TiN or Pt electodes with a portion operable as a current limiting layer for ReRAM applications
- Patent Title (中): ZnTe在TiN或Pt电极上，其一部分可用作ReRAM应用的限流层
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Application No.: US14073718Application Date: 2013-11-06
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Publication No.: US08981335B2Publication Date: 2015-03-17
- Inventor: Venkat Ananthan , Prashant B. Phatak
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L47/00
- IPC: H01L47/00 ; G11C13/00 ; H01L45/00 ; H01L21/66 ; H01L27/24
Abstract:
Resistive random access memory (ReRAM) cells can include a ZnTe switching layer and TiN or Pt electrodes. The combination of the switching layer of ZnTe and the electrodes of TiN or Pt is designed to achieve desirable performance characteristics, such as low current leakage as well as low and consistent switching currents. High temperature anneal of the ZnTe switching layer can further improve the performance of the ReRAM cells. The switching layer may be deposited using various techniques, such as sputtering or atomic layer deposition (ALD).
Public/Granted literature
- US20140264241A1 ZnTe on TiN or Pt Electrodes as a Resistive Switching Element for ReRAM Applications Public/Granted day:2014-09-18
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