Invention Grant
- Patent Title: Fin-shaped field-effect transistor (FinFET)
- Patent Title (中): 鳍状场效应晶体管（FinFET）
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Application No.: US13954991Application Date: 2013-07-31
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Publication No.: US08981487B2Publication Date: 2015-03-17
- Inventor: Yu-Hsiang Hung , Ssu-I Fu , Chien-Ting Lin , Po-Chao Tsao , Chung-Fu Chang , Cheng-Guo Chen
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L27/092 ; H01L21/8238
Abstract:
A method for fabricating fin-shaped field-effect transistor (FinFET) is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure in the substrate; forming a shallow trench isolation (STI) on the substrate and around the bottom portion of the fin-shaped structure; forming a first gate structure on the STI and the fin-shaped structure; and removing a portion of the STI for exposing the sidewalls of the STI underneath the first gate structure.
Public/Granted literature
- US20150035069A1 FINFET AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-02-05
Information query
IPC分类:
