A power semiconductor module includes a first printed circuit board having a first insulation carrier, and a first upper metallization and a first lower metallization applied to the first insulation carrier on mutually opposite sides, and a second printed circuit board having a second insulation carrier and a second upper metallization applied to the second insulation carrier. The second printed circuit board is spaced apart from the first printed circuit board in a vertical direction oriented perpendicular to the opposite sides of the first insulation carrier. A semiconductor chip is disposed between the printed circuit boards and electrically conductively connected at least to the second upper metallization. The first lower metallization and the second upper metallization face one another. The first printed circuit board has a first thick conductor layer at least partly embedded in the first insulation carrier and which has a thickness of at least 100 μm.