发明授权
US08981557B2 Method for forming photovoltaic cell, and resulting photovoltaic cell
有权
用于形成光伏电池的方法,以及所得到的光伏电池
- 专利标题: Method for forming photovoltaic cell, and resulting photovoltaic cell
- 专利标题(中): 用于形成光伏电池的方法,以及所得到的光伏电池
-
申请号: US13621318申请日: 2012-09-17
-
公开(公告)号: US08981557B2公开(公告)日: 2015-03-17
- 发明人: Chih-Chiang Tu , Chun-Lang Chen
- 申请人: Chih-Chiang Tu , Chun-Lang Chen
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/52 ; H01L29/40 ; G03F7/00 ; B82Y10/00 ; B82Y40/00 ; H01L31/0224 ; H01L31/068 ; H01L31/18
摘要:
A photovoltaic cell manufacturing method is disclosed. Methods include manufacturing a photovoltaic cell having a selective emitter and buried contact (electrode) structure utilizing nanoimprint technology. The methods include providing a semiconductor substrate having a first surface and a second surface opposite the first surface; forming a first doped region in the semiconductor substrate adjacent to the first surface; performing a nanoimprint process and an etching process to form a trench in the semiconductor substrate, the trench extending into the semiconductor substrate from the first surface; forming a second doped region in the semiconductor substrate within the trench, the second doped region having a greater doping concentration than the first doped region; and filling the trench with a conductive material. The nanoimprint process uses a mold to define a location of an electrode line layout.