Metal PVD-free conducting structures

Invention Grant

US08981564B2 Metal PVD-free conducting structures 有权

Title translation: 金属无PVD导电结构

Please log in to see more content

Patent Title: Metal PVD-free conducting structures
Patent Title (中): 金属无PVD导电结构
Application No.: US13897956

Application Date: 2013-05-20
Publication No.: US08981564B2

Publication Date: 2015-03-17
Inventor: Charles G. Woychik , Cyprian Emeka Uzoh , Michael Newman , Pezhman Monadgemi , Terrence Caskey
Applicant: Invensas Corporation
Applicant Address: US CA San Jose
Assignee: Invensas Corporation
Current Assignee: Invensas Corporation
Current Assignee Address: US CA San Jose
Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
Main IPC: H01L23/48
IPC: H01L23/48 ; H01L21/768

Abstract:

Structures and methods of forming the same are disclosed herein. In one embodiment, a structure can comprise a region having first and second oppositely facing surfaces. A barrier region can overlie the region. An alloy region can overlie the barrier region. The alloy region can include a first metal and one or more elements selected from the group consisting of silicon (Si), germanium (Ge), indium (Id), boron (B), arsenic (As), antimony (Sb), tellurium (Te), or cadmium (Cd).

Abstract(Chinese):

本文公开了其形成的结构和方法。在一个实施例中，结构可以包括具有第一和第二相对面的表面的区域。屏障区域可以覆盖该区域。合金区域可以覆盖阻挡区域。合金区域可以包括第一金属和选自硅（Si），锗（Ge），铟（Id），硼（B），砷（As），锑（Sb），碲的一种或多种元素（Te）或镉（Cd）。

Public/Granted literature

US20140339702A1 METAL PVD-FREE CONDUCTING STRUCTURES Public/Granted day:2014-11-20

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/48	.用于向或自处于工作中的固态物体通电的装置，例如引线或接线端装置