Invention Grant
- Patent Title: Common mode filter with ESD protection pattern built therein
- Patent Title (中): 共模滤波器,其中内置ESD保护模式
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Application No.: US13831620Application Date: 2013-03-15
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Publication No.: US08981889B2Publication Date: 2015-03-17
- Inventor: Young Seuck Yoo , Kang Heon Hur , Jun Hee Bae , Yong Suk Kim , Sang Moon Lee , Won Chul Sim , Young Do Kweon , Sung Kwon Wi
- Applicant: Samsung Electro-Mechanics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Bracewell & Giuliani LLP
- Agent Brad Y. Chin
- Priority: KR10-2012-0094776 20120829
- Main IPC: H01F17/00
- IPC: H01F17/00 ; H01F5/00 ; H01F27/28 ; H01F27/24 ; H01F27/40

Abstract:
Disclosed herein is a common mode filter with an ESD protection pattern built therein. The common mode filter includes a base substrate that is made of an insulating material, a first insulating layer that is formed on the base substrate, a coil-shaped internal electrode that is formed on the first insulating layer, a second insulating layer that is formed on the internal electrode, a first external electrode terminal that is formed on the second insulating layer, a first ferrite resin layer that is formed on the second insulating layer and receives the first external electrode terminal, an ESD protection pattern that is formed on the first external electrode terminal, a second external electrode terminal that is formed on the ESD protection pattern, and a second ferrite resin layer that is formed on the first ferrite resin layer and receives the second external electrode terminal.
Public/Granted literature
- US20140062637A1 Common Mode Filter With ESD Protection Pattern Built Therein Public/Granted day:2014-03-06
Information query
IPC分类:
H | 电学 |
H01 | 基本电气元件 |
H01F | 磁体;电感;变压器;磁性材料的选择 |
H01F17/00 | 信号类型的固定电感器 |