Invention Grant
- Patent Title: Selectable PA bias temperature compensation circuitry
- Patent Title (中): 可选PA偏置温度补偿电路
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Application No.: US13288318Application Date: 2011-11-03
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Publication No.: US08983407B2Publication Date: 2015-03-17
- Inventor: William David Southcombe , David E. Jones , Hui Liu , Chris Levesque , Scott Yoder , Terry J. Stockert
- Applicant: William David Southcombe , David E. Jones , Hui Liu , Chris Levesque , Scott Yoder , Terry J. Stockert
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H04B1/04
- IPC: H04B1/04 ; H01Q11/12 ; H03F3/19 ; H03F3/217 ; H03F3/24 ; H03F1/30 ; H03F3/72

Abstract:
Radio frequency (RF) power amplifier (PA) circuitry, which transmits RF signals is disclosed. The RF PA circuitry includes a final stage, a final stage current digital-to-analog converter (IDAC), and a final stage temperature compensation circuit. A final stage current reference circuit may provide an uncompensated final stage reference current to the final stage temperature compensation circuit, which receives and temperature compensates the uncompensated final stage reference current to provide a final stage reference current. The final stage IDAC uses the final stage reference current in a digital-to-analog conversion to provide a final stage bias signal to bias the final stage. The temperature compensation provided by the final stage temperature compensation circuit is selectable.
Public/Granted literature
- US20120052825A1 SELECTABLE PA BIAS TEMPERATURE COMPENSATION CIRCUITRY Public/Granted day:2012-03-01
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