Invention Grant
- Patent Title: High reliability memory controller
- Patent Title (中): 高可靠性内存控制器
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Application No.: US13649745Application Date: 2012-10-11
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Publication No.: US08984368B2Publication Date: 2015-03-17
- Inventor: Gabriel H. Loh , Vilas K. Sridharan
- Applicant: Advanced Micro Devices, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Polansky & Associates, P.L.L.C.
- Agent Paul J. Polansky
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10
Abstract:
An integrated circuit includes a memory having an address space and a memory controller coupled to the memory for accessing the address space in response to received memory accesses. The memory controller further accesses a plurality of data elements in a first portion of the address space, and reliability data corresponding to the plurality of data elements in a second portion of the address space.
Public/Granted literature
- US20140108885A1 HIGH RELIABILITY MEMORY CONTROLLER Public/Granted day:2014-04-17
Information query
