Invention Grant
- Patent Title: High pressure apparatus and method for nitride crystal growth
- Patent Title (中): 用于氮化物晶体生长的高压装置和方法
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Application No.: US13343563Application Date: 2012-01-04
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Publication No.: US08986447B2Publication Date: 2015-03-24
- Inventor: Mark P. D'Evelyn
- Applicant: Mark P. D'Evelyn
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: C30B7/10
- IPC: C30B7/10 ; C30B29/40 ; B01J3/00 ; B01J3/04 ; B01J3/06 ; B30B11/00

Abstract:
A high pressure apparatus and related methods for processing supercritical fluids. In a specific embodiment, the present apparatus includes a capsule, a heater, at least one ceramic ring but can be multiple rings, optionally, with one or more scribe marks and/or cracks present. In a specific embodiment, the apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. In a specific embodiment, the apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively.
Public/Granted literature
- US20120118223A1 High Pressure Apparatus and Method for Nitride Crystal Growth Public/Granted day:2012-05-17
Information query
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