Invention Grant
- Patent Title: Metal semiconductor alloy contact with low resistance
- Patent Title (中): 金属半导体合金接触电阻低
-
Application No.: US14028957Application Date: 2013-09-17
-
Publication No.: US08987078B2Publication Date: 2015-03-24
- Inventor: Jian Yu , Jeffrey B. Johnson , Zhengwen Li , Chengwen Pei , Michael Hargrove
- Applicant: International Business Machines Corporation , GLOBALFOUNDRIES Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: International Business Machines Corporation,GLOBAL FOUNDRIES, Inc.
- Current Assignee: International Business Machines Corporation,GLOBAL FOUNDRIES, Inc.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Yuanmin Cai
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238 ; H01L29/66 ; H01L21/285 ; H01L21/768 ; H01L23/485 ; H01L29/49 ; H01L29/51
Abstract:
A method of forming a semiconductor device is provided that includes forming a gate structure on a channel portion of a semiconductor substrate, forming an interlevel dielectric layer over the gate structure, and forming a opening through the interlevel dielectric layer to an exposed surface of the semiconductor substrate containing at least one of the source region and the drain region. A metal semiconductor alloy contact is formed on the exposed surface of the semiconductor substrate. At least one dielectric sidewall spacer is formed on sidewalls of the opening. An interconnect is formed within the opening in direct contact with the metal semiconductor alloy contact.
Public/Granted literature
- US20140017862A1 METAL SEMICONDUCTOR ALLOY CONTACT WITH LOW RESISTANCE Public/Granted day:2014-01-16
Information query
IPC分类:
