发明授权
US08987144B2 High-K metal gate electrode structures formed by cap layer removal without sacrificial spacer
有权
高K金属栅极电极结构通过盖层去除形成而不需要牺牲间隔物
- 专利标题: High-K metal gate electrode structures formed by cap layer removal without sacrificial spacer
- 专利标题(中): 高K金属栅极电极结构通过盖层去除形成而不需要牺牲间隔物
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申请号: US13198107申请日: 2011-08-04
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公开(公告)号: US08987144B2公开(公告)日: 2015-03-24
- 发明人: Stephan Kronholz , Markus Lenski , Hans-Juergen Thees
- 申请人: Stephan Kronholz , Markus Lenski , Hans-Juergen Thees
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Amerson Law Firm, PLLC
- 优先权: DE102010063907 20101222
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/8238 ; H01L21/311 ; H01L29/165 ; H01L29/66 ; H01L29/78 ; H01L21/3115
摘要:
In sophisticated semiconductor devices, high-k metal gate electrode structures may be formed in an early manufacturing stage with superior integrity of sensitive gate materials by providing an additional liner material after the selective deposition of a strain-inducing semiconductor material in selected active regions. Moreover, the dielectric cap materials of the gate electrode structures may be removed on the basis of a process flow that significantly reduces the degree of material erosion in isolation regions and active regions by avoiding the patterning and removal of any sacrificial oxide spacers.