Invention Grant
- Patent Title: Magnetoresistive sensor shield
- Patent Title (中): 磁阻传感器屏蔽
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Application No.: US13953936Application Date: 2013-07-30
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Publication No.: US08988832B2Publication Date: 2015-03-24
- Inventor: Kevin McNeill , Aidan Goggin , Marcus Ormston , Victor Boris Sapozhnikov
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: HolzerIPLaw, PC
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G11B5/11

Abstract:
Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for a region of reduced anisotropy within a synthetic antiferromagnetic (SAF) shield. The SAF shield includes first and second layers of ferromagnetic material separated by a coupling spacer layer. A distance between the first and second layers of ferromagnetic material is greater in a region proximal to the sensor stack than in a region away from the sensor stack.
Public/Granted literature
- US20150036246A1 MAGNETORESISTIVE SENSOR SHIELD Public/Granted day:2015-02-05
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