Recessed AFM stitch interface engineering

    公开(公告)号:US09870790B1

    公开(公告)日:2018-01-16

    申请号:US15157579

    申请日:2016-05-18

    CPC classification number: G11B5/3912 G11B5/3163 G11B5/3929

    Abstract: A read sensor and fabrication method thereof. The method includes forming a bottom stack that includes an antiferromagnetic (AFM) layer, a lower ferromagnetic stitch layer above the AFM layer and a sacrificial cap layer on the lower ferromagnetic stitch layer. The sacrificial cap layer is formed of a material that alloys magnetically with the lower ferromagnetic stitch layer. The method further includes substantially removing the sacrificial cap layer. After substantially removing the sacrificial layer, an upper ferromagnetic stitch layer is deposited on the lower ferromagnetic stitch layer of the bottom stack to form a stitch interface that provides relatively strong magnetic coupling between the lower ferromagnetic stitch layer of the bottom stack and the upper ferromagnetic stitch layer.

    Data reader with horizontal lamination shield
    2.
    发明授权
    Data reader with horizontal lamination shield 有权
    数据读取器,带水平叠层屏蔽

    公开(公告)号:US09047884B2

    公开(公告)日:2015-06-02

    申请号:US13960394

    申请日:2013-08-06

    CPC classification number: G11B5/11 G11B5/3912 G11B5/398

    Abstract: A data storage device may be constructed to sense data bits with at least a magnetic stack contacting a shield that has a horizontal lamination of magnetic and non-magnetic layers. The magnetic layer may be configured with a first width at an air bearing surface (ABS) that defines a first aspect ratio and a different second width that defines a different second aspect ratio distal the ABS.

    Abstract translation: 数据存储装置可以被构造成用至少一个磁性堆栈接触具有磁性和非磁性层的水平叠层的屏蔽来感测数据位。 磁性层可以在限定第一长宽比的空气轴承表面(ABS)处构造为具有第一宽度,并且在远离ABS的位置限定不同的第二纵横比。

    Magnetoresistive sensor with recessed antiferromagnetic layer and stabilization feature

    公开(公告)号:US10008223B1

    公开(公告)日:2018-06-26

    申请号:US15435561

    申请日:2017-02-17

    Abstract: A read sensor having a bearing surface and an antiferromagnetic (AFM) layer recessed from the bearing surface. The read sensor includes a synthetic antiferromagnetic (SAF) structure over the AFM layer. The SAF structure includes a recessed lower pinned layer, an upper pinned layer, a reference layer and a stabilization feature. The stabilization feature may include deliberate reduction of the antiferromagnetic coupling energy density between the upper pinned layer and the reference layer, so that it becomes lower than the first energy density of antiferromagnetic coupling between the upper pinned layer and the lower pinned layer. The stabilization feature may alternatively include an intermediate pinned layer between the lower pinned layer and the upper pinned layer. The intermediate pinned layer is antiferromagnetically coupled to both the lower pinned layer and the upper pinned layer, and at least a portion of the intermediate pinned layer is recessed behind the bearing surface.

    SHAPED DATA SENSOR SHIELD CONTACTS
    5.
    发明申请
    SHAPED DATA SENSOR SHIELD CONTACTS 有权
    形状数据传感器屏蔽触点

    公开(公告)号:US20140268429A1

    公开(公告)日:2014-09-18

    申请号:US13835952

    申请日:2013-03-15

    CPC classification number: G11B5/3912 G11B5/398 H01L43/08

    Abstract: A data sensor may be configured in accordance with some embodiments to have a magnetically responsive stack that contacts at least one shield. The at least one shield may be constructed with a non-rectangular shaped electrical contact, such as a triangular and trapezoidal shape, respectively positioned on top and bottom shields on opposite sides of the magnetically responsive stack.

    Abstract translation: 可以根据一些实施例来配置数据传感器以具有接触至少一个屏蔽的磁响应堆叠。 所述至少一个屏蔽件可以被构造成具有非矩形形状的电触点,例如三角形和梯形形状,分别位于磁性响应堆叠的相对侧上的顶部和底部屏蔽上。

    Seed trilayer for magnetic element
    6.
    发明授权
    Seed trilayer for magnetic element 有权
    种子三层磁性元件

    公开(公告)号:US08743507B1

    公开(公告)日:2014-06-03

    申请号:US13797500

    申请日:2013-03-12

    Abstract: A magnetic element may generally be configured at least with a magnetic stack contacting a leading shield with a seed trilayer. The seed trilayer may have a magnetic layer formed of a metal material and disposed between first and second non-magnetic layers while at least one of the non-magnetic layers constructed of the metal material.

    Abstract translation: 磁性元件通常至少可以配置有一个磁性叠层,将磁性屏蔽与种子三层接触。 种子三层可以具有由金属材料形成并设置在第一和第二非磁性层之间的磁性层,而由金属材料构成的至少一个非磁性层。

    Data Reader With Horizontal Lamination Shield
    9.
    发明申请
    Data Reader With Horizontal Lamination Shield 有权
    数据读取器与水平层压盾

    公开(公告)号:US20150043107A1

    公开(公告)日:2015-02-12

    申请号:US13960394

    申请日:2013-08-06

    CPC classification number: G11B5/11 G11B5/3912 G11B5/398

    Abstract: A data storage device may be constructed to sense data bits with at least a magnetic stack contacting a shield that has a horizontal lamination of magnetic and non-magnetic layers. The magnetic layer may be configured with a first width at an air bearing surface (ABS) that defines a first aspect ratio and a different second width that defines a different second aspect ratio distal the ABS.

    Abstract translation: 数据存储装置可以被构造成用至少一个磁性堆栈接触具有磁性和非磁性层的水平叠层的屏蔽来感测数据位。 磁性层可以在限定第一长宽比的空气轴承表面(ABS)处构造为具有第一宽度,并且在远离ABS的位置限定不同的第二纵横比。

    MAGNETORESISTIVE SENSOR SHIELD
    10.
    发明申请
    MAGNETORESISTIVE SENSOR SHIELD 有权
    磁传感器屏蔽

    公开(公告)号:US20150036246A1

    公开(公告)日:2015-02-05

    申请号:US13953936

    申请日:2013-07-30

    Abstract: Implementations disclosed herein allow a signal detected by a magnetoresistive (MR) sensor to be improved by providing for a region of reduced anisotropy within a synthetic antiferromagnetic (SAF) shield. The SAF shield includes first and second layers of ferromagnetic material separated by a coupling spacer layer. A distance between the first and second layers of ferromagnetic material is greater in a region proximal to the sensor stack than in a region away from the sensor stack.

    Abstract translation: 通过在合成的反铁磁(SAF)屏蔽内提供减小各向异性的区域,可以改善由磁阻(MR)传感器检测到的信号。 SAF屏蔽包括由耦合间隔层隔开的第一和第二层铁磁材料层。 铁氧体材料的第一和第二层之间的距离在靠近传感器堆叠的区域中大于远离传感器堆叠的区域。

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