Invention Grant
- Patent Title: Ultra-wideband high power amplifier architecture
- Patent Title (中): 超宽带高功率放大器架构
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Application No.: US13833653Application Date: 2013-03-15
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Publication No.: US08989683B2Publication Date: 2015-03-24
- Inventor: Robert Actis , Robert J. Lender, Jr. , Steven Rajkowski , Bernard J. Schmanski
- Applicant: BAE Systems Information And Electronic Systems Integration Inc.
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Finch & Maloney PLLC
- Agent Daniel J. Long
- Main IPC: H01Q11/12
- IPC: H01Q11/12 ; H04B1/04 ; H03G3/30 ; H03F3/24 ; H03F3/60

Abstract:
Techniques and architecture are disclosed for providing an ultra-wideband, multi-channel solid-state power amplifier architecture. In some embodiments, the architecture includes a power divider which splits an input signal and delivers that split signal to a plurality of downstream channel chipsets. Each channel chipset is configured to amplify a sub-band of the original full-band input signal and to provide the resultant amplified sub-band for downstream use, such as for transmission by an antenna operatively coupled with that channel. In the aggregate, the amplified sub-bands provide coverage of the same ultra-wideband frequency range of the original input signal, in some cases. In some embodiments, the architecture provides high radio frequency (RF) power with good amplifying efficiency and ultra-wide instantaneous frequency bandwidth performance in a small-form-factor package. In some instances, control circuitry is provided to control which chipset die(s) are enabled/disabled, thus providing control over gain and power levels of the output signal(s).
Public/Granted literature
- US20130260703A1 ULTRA-WIDEBAND HIGH POWER AMPLIFIER ARCHITECTURE Public/Granted day:2013-10-03
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