发明授权
US08993044B2 Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
有权
形成具有包括多个含金属氧化物的材料的电介质区域的电容器的方法
- 专利标题: Methods of forming capacitors having dielectric regions that include multiple metal oxide-comprising materials
- 专利标题(中): 形成具有包括多个含金属氧化物的材料的电介质区域的电容器的方法
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申请号: US13550340申请日: 2012-07-16
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公开(公告)号: US08993044B2公开(公告)日: 2015-03-31
- 发明人: Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
- 申请人: Rishikesh Krishnan , John Smythe , Vishwanath Bhat , Noel Rocklein , Bhaskar Srinivasan , Jeff Hull , Chris Carlson
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wells St. John, P.S.
- 主分类号: H01G4/06
- IPC分类号: H01G4/06 ; H01G4/12 ; H01G4/33 ; H01L49/02
摘要:
Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
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