发明授权
- 专利标题: Capacitor and method for fabricating the same
- 专利标题(中): 电容器及其制造方法
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申请号: US13596007申请日: 2012-08-27
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公开(公告)号: US08993396B2公开(公告)日: 2015-03-31
- 发明人: Jong-Kook Park , Yong-Tae Cho
- 申请人: Jong-Kook Park , Yong-Tae Cho
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK Hynix Inc.
- 当前专利权人: SK Hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: IP & T Group LLP
- 优先权: KR10-2012-0048557 20120508
- 主分类号: H01L21/77
- IPC分类号: H01L21/77 ; H01L49/02 ; H01L29/94 ; H01L29/66 ; H01L27/108
摘要:
A method for fabricating a capacitor includes forming a mold structure over a substrate, wherein the mold structure has a plurality of open parts and has a mold layer stacked with a support layer; forming cylinder type lower electrodes in the open parts; forming a first upper electrode over an entire surface of a structure including the cylinder type lower electrodes to fill the cylinder type lower electrodes; defining a through hole that passes through portions of the first upper electrode and the support layer; removing the mold layer through the through hole and exposing the cylinder type lower electrodes; forming a second upper electrode to fill the through hole and spaces between the cylinder type lower electrodes; and forming a third upper electrode to connect the second upper electrode and the first upper electrode with each other.
公开/授权文献
- US20130299942A1 CAPACITOR AND METHOD FOR FABRICATING THE SAME 公开/授权日:2013-11-14
信息查询
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