Invention Grant
US08993418B2 Shallow heavily doped semiconductor layer by cyclic selective epitaxial deposition process
有权
通过循环选择性外延沉积工艺的浅重掺杂半导体层
- Patent Title: Shallow heavily doped semiconductor layer by cyclic selective epitaxial deposition process
- Patent Title (中): 通过循环选择性外延沉积工艺的浅重掺杂半导体层
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Application No.: US13988436Application Date: 2010-11-19
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Publication No.: US08993418B2Publication Date: 2015-03-31
- Inventor: Vincent Destefanis , Nicolas Loubet
- Applicant: Vincent Destefanis , Nicolas Loubet
- Applicant Address: FR Paris US TX Coppell
- Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives,STMicroelectronics, Inc.
- Current Assignee: Commissariat a l'Energie Atomique et aux Energies Alternatives,STMicroelectronics, Inc.
- Current Assignee Address: FR Paris US TX Coppell
- Agency: Oliff PLC
- International Application: PCT/US2010/057441 WO 20101119
- International Announcement: WO2012/067625 WO 20120524
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01G9/20 ; H01L21/02
Abstract:
The deposition method comprises providing a substrate with a first mono-crystalline zone made of a semiconductor material and a second zone made of an insulating material. During a passivation step, a passivation atmosphere is applied on the substrate so as to cover the first zone with doping impurities. During a deposition step, gaseous silicon and/or germanium precursors are introduced and a doped semiconductor film is formed. The semiconductor film is mono-crystalline over the first zone and has a different texture over the second zone. During an etching step, a chloride gaseous precursor is applied on the substrate so as to remove the semiconductor layer over the second zone.
Public/Granted literature
- US20140024203A1 SHALLOW HEAVILY DOPED SEMICONDUCTOR LAYER BY CYCLIC SELECTIVE EPITAXIAL DEPOSITION PROCESS Public/Granted day:2014-01-23
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