发明授权
- 专利标题： Metal shield for integrated circuits
- 专利标题（中）： 集成电路金属屏蔽
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申请号： US13415407申请日： 2012-03-08
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公开(公告)号： US08994152B2公开(公告)日： 2015-03-31
- 发明人: Roger Carroll , Greg Nelson
- 申请人： Roger Carroll , Greg Nelson
- 申请人地址： US MN Bloomington
- 专利权人： Polar Semiconductor, LLC
- 当前专利权人： Polar Semiconductor, LLC
- 当前专利权人地址： US MN Bloomington
- 代理机构： Kinney & Lange, P.A.
- 主分类号： H01L23/552
- IPC分类号： H01L23/552 ; H01L23/522
摘要：
A metal shield structure is provided for an integrated circuit (IC) having at least a first metal contact coupled to a fixed potential and a second metal contact. A first passivation layer is located between the first and second metal contacts and on a first portion of the first metal contact and a first portion of the second metal contact, leaving a second portion of the first metal contact and a second portion of the second metal contact uncovered by the first passivation layer. A metal shield layer is provided on the second portion of the first metal contact and on the first passivation layer, and a second passivation layer is formed on the metal shield layer.
公开/授权文献
- US20130234303A1 METAL SHIELD FOR INTEGRATED CIRCUITS 公开/授权日：2013-09-12