发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13740354申请日： 2013-01-14
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公开(公告)号： US08994159B2公开(公告)日： 2015-03-31
- 发明人: Hiroyuki Nakamura , Akira Muto , Nobuya Koike , Atsushi Nishikizawa , Yukihiro Sato , Katsuhiko Funatsu
- 申请人： Hiroyuki Nakamura , Akira Muto , Nobuya Koike , Atsushi Nishikizawa , Yukihiro Sato , Katsuhiko Funatsu
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Mattingly & Malur, P.C.
- 优先权： JP2009-094648 20090409
- 主分类号： H01L23/495
- IPC分类号： H01L23/495 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L23/00
摘要：
To prevent, in a resin-sealed type semiconductor package, generation of cracks in a die bonding material used for mounting of a semiconductor chip. A semiconductor chip is mounted over the upper surface of a die pad via a die bonding material, followed by sealing with an insulating resin. The top surface of the die pad to be brought into contact with the insulating resin is surface-roughened, while the bottom surface of the die pad and an outer lead portion are not surface-roughened.
公开/授权文献
- US20130127032A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2013-05-23
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