发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US14368628申请日： 2012-12-21
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公开(公告)号： US08994167B2公开(公告)日： 2015-03-31
- 发明人: Takuya Kadoguchi , Shingo Iwasaki , Tomohiro Miyazaki , Masayoshi Nishihata , Tomomi Okumura
- 申请人： Takuya Kadoguchi , Shingo Iwasaki , Tomohiro Miyazaki , Masayoshi Nishihata , Tomomi Okumura
- 申请人地址： JP Toyota-Shi JP Kariya-Shi
- 专利权人： Toyota Jidosha Kabushiki Kaisha,Denso Corporation
- 当前专利权人： Toyota Jidosha Kabushiki Kaisha,Denso Corporation
- 当前专利权人地址： JP Toyota-Shi JP Kariya-Shi
- 代理机构： Kenyon & Kenyon LLP
- 优先权： JP2011-282920 20111226
- 国际申请： PCT/IB2012/002777 WO 20121221
- 国际公布： WO2013/098629 WO 20130704
- 主分类号： H01L29/72
- IPC分类号： H01L29/72 ; H01L23/367 ; H01L23/31
摘要：
A semiconductor device includes a plurality of semiconductor elements each having a front surface and a back surface; a front surface-side heatsink that is positioned on a front-surface side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a back surface-side heatsink that is positioned on a back surface-side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a sealing material that covers the semiconductor device except for a front surface of the front surface-side heatsink and a back surface of the back surface-side heatsink; a primer that is coated on at least one of the front surface-side heatsink and the back surface-side heatsink and improves contact with the sealing member; and a protruding portion positioned between the plurality of semiconductor elements, on at least one of the back surface of the front surface-side heatsink and the front surface of the back surface-side heatsink.
公开/授权文献
- US20140374895A1 SEMICONDUCTOR DEVICE 公开/授权日：2014-12-25
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