Invention Grant
- Patent Title: Light-emitting element
- Patent Title (中): 发光元件
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Application No.: US13370676Application Date: 2012-02-10
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Publication No.: US08994263B2Publication Date: 2015-03-31
- Inventor: Satoko Shitagaki , Satoshi Seo , Nobuharu Ohsawa , Hideko Inoue , Masahiro Takahashi , Kunihiko Suzuki
- Applicant: Satoko Shitagaki , Satoshi Seo , Nobuharu Ohsawa , Hideko Inoue , Masahiro Takahashi , Kunihiko Suzuki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-031426 20110216
- Main IPC: H05B33/14
- IPC: H05B33/14 ; H01L51/00 ; H01L51/50

Abstract:
Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
Public/Granted literature
- US20120206035A1 LIGHT-EMITTING ELEMENT Public/Granted day:2012-08-16
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