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公开(公告)号：US08994263B2
公开(公告)日：2015-03-31
申请号：US13370676
申请日：2012-02-10
申请人： Satoko Shitagaki , Satoshi Seo , Nobuharu Ohsawa , Hideko Inoue , Masahiro Takahashi , Kunihiko Suzuki
发明人： Satoko Shitagaki , Satoshi Seo , Nobuharu Ohsawa , Hideko Inoue , Masahiro Takahashi , Kunihiko Suzuki
CPC分类号： H01L51/5016 , C09K11/025 , C09K11/06 , C09K2211/1007 , C09K2211/1044 , C09K2211/185 , H01L51/0052 , H01L51/0056 , H01L51/0058 , H01L51/006 , H01L51/0061 , H01L51/0072 , H01L51/0074 , H01L51/0085 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5092 , H01L51/5218 , H01L51/5234 , H01L2251/55 , H05B33/14
摘要： Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.
摘要翻译： 提供具有高外部量子效率的发光元件或具有长寿命的发光元件。 发光元件在一对电极之间包括包含客体材料的发光层和主体材料，其中主体材料的发射光谱与客体材料的吸收光谱重叠，并且发射磷光 通过将主体材料的激发能转化为客体材料的激发能量。 通过使用主体材料的发射光谱和客体材料的吸收光谱之间的重叠，能量从主体材料平滑地转移到客体材料，使得发光元件的能量传递效率高。 因此，可以实现具有高外部量子效率的发光元件。
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公开(公告)号：US08608855B2
公开(公告)日：2013-12-17
申请号：US11790383
申请日：2007-04-25
IPC分类号： C23C16/00
CPC分类号： C23C16/448 , C23C14/243 , C23C14/26 , H05B3/03
摘要： The present invention provides an evaporation device for which maintenance is readily conducted, and further, provides an electrode cover which can prevent an evaporation material from being adhered to electrodes. Moreover, the present invention provides an evaporation device including an evaporation chamber; a holding portion for holding an object to be treated; an evaporation source; an electrode; an electrode cover; and a power supply, in which the evaporation chamber includes the holding portion in an upper portion, and includes the evaporation source, the electrode, and the electrode cover in a lower portion; the electrode cover covers at least a part of an exposed surface of the electrode; the electrode and the power supply are electrically connected.
摘要翻译： 本发明提供了一种容易进行维护的蒸发装置，并且还提供一种能够防止蒸发材料粘附到电极上的电极盖。 此外，本发明提供一种蒸发装置，其包括蒸发室; 用于保持待处理物体的保持部分; 蒸发源; 电极 电极盖; 以及电源，其中蒸发室在上部包括保持部分，并且在下部包括蒸发源，电极和电极盖; 电极盖覆盖电极的暴露表面的至少一部分; 电极和电源电连接。
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公开(公告)号：US20070251457A1
公开(公告)日：2007-11-01
申请号：US11790383
申请日：2007-04-25
IPC分类号： C23C16/00
CPC分类号： C23C16/448 , C23C14/243 , C23C14/26 , H05B3/03
摘要： The present invention provides an evaporation device for which maintenance is readily conducted, and further, provides an electrode cover which can prevent an evaporation material from being adhered to electrodes. Moreover, the present invention provides an evaporation device including an evaporation chamber; a holding portion for holding an object to be treated; an evaporation source; an electrode; an electrode cover; and a power supply, in which the evaporation chamber includes the holding portion in an upper portion, and includes the evaporation source, the electrode, and the electrode cover in a lower portion; the electrode cover covers at least a part of an exposed surface of the electrode; the electrode and the power supply are electrically connected.
摘要翻译： 本发明提供了一种容易进行维护的蒸发装置，并且还提供一种能够防止蒸发材料粘附到电极上的电极盖。 此外，本发明提供一种蒸发装置，其包括蒸发室; 用于保持待处理物体的保持部分; 蒸发源; 电极 电极盖; 以及电源，其中蒸发室在上部包括保持部分，并且在下部包括蒸发源，电极和电极盖; 电极盖覆盖电极的暴露表面的至少一部分; 电极和电源电连接。
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4.发明授权Light-emitting element, light-emitting device, lighting device, and electronic devices 有权发光元件，发光装置，照明装置和电子装置公开(公告)号：US08809841B2
公开(公告)日：2014-08-19
申请号：US13303637
申请日：2011-11-23
IPC分类号： H01L51/50
CPC分类号： H01L51/5012 , H01L51/006 , H01L51/0072 , H01L51/5016 , H01L51/506 , H01L51/5203 , H01L2251/558
摘要： A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.
摘要翻译： 至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体（电子或空穴） - 传输特性的主体材料和带隙大于的带隙的单分子层 在一对电极之间的发光中心材料的带隙（注意，带隙是指HOMO能级和LUMO能级之间的能量差），其中包括主体材料的单分子层和包括主体材料的单分子层 发光中心材料共享相同的界面。
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5.发明申请Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Devices 有权发光元件，发光器件，照明器件和电子器件公开(公告)号：US20120126212A1
公开(公告)日：2012-05-24
申请号：US13303637
申请日：2011-11-23
CPC分类号： H01L51/5012 , H01L51/006 , H01L51/0072 , H01L51/5016 , H01L51/506 , H01L51/5203 , H01L2251/558
摘要： A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided.
摘要翻译： 至少包括具有荧光发光性的发光中心材料的单分子层的发光元件和包含载体（电子或空穴） - 传输特性的主体材料和带隙大于的带隙的单分子层 在一对电极之间的发光中心材料的带隙（注意，带隙是指HOMO能级和LUMO能级之间的能量差），其中包括主体材料的单分子层和包括主体材料的单分子层 发光中心材料共享相同的界面。
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6.发明授权Method for manufacturing an oxide-based semiconductor thin film transistor (TFT) including out diffusing hydrogen or moisture from the oxide semiconductor layer into an adjacent insulating layer which contains a halogen element 有权一种用于制造氧化物基半导体薄膜晶体管（TFT）的方法，该氧化物基半导体薄膜晶体管包括将氢或水分从氧化物半导体层扩散到包含卤素元素的相邻绝缘层中公开(公告)号：US08642412B2
公开(公告)日：2014-02-04
申请号：US12906175
申请日：2010-10-18
IPC分类号： H01L21/385
CPC分类号： H01L21/02664 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L23/564 , H01L29/4908 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H2O) is eliminated from an oxide semiconductor layer with use of a halogen element typified by fluorine or chlorine, so that the impurity concentration in the oxide semiconductor layer is reduced. A gate insulating layer and/or an insulating layer provided in contact with the oxide semiconductor layer can be formed to contain a halogen element. In addition, a halogen element may be attached to the oxide semiconductor layer through plasma treatment under an atmosphere of a gas containing a halogen element.
摘要翻译： 本发明的目的是提供一种其中使用氧化物半导体的稳定电特性的半导体器件。 使用以氟或氯为代表的卤素元素，从氧化物半导体层中除去氢或水分等杂质（例如氢原子或含有氢原子的化合物，例如H 2 O），使得杂质浓度 氧化物半导体层减少。 可以形成与氧化物半导体层接触设置的栅极绝缘层和/或绝缘层以含有卤素元素。 此外，卤素元素可以在含有卤素元素的气体的气氛下通过等离子体处理附着到氧化物半导体层。
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公开(公告)号：US09911856B2
公开(公告)日：2018-03-06
申请号：US12900145
申请日：2010-10-07
IPC分类号： H01L29/786 , H01L29/423
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/78606 , H01L29/78696
摘要： One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.
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公开(公告)号：US09635313B2
公开(公告)日：2017-04-25
申请号：US13538560
申请日：2012-06-29
CPC分类号： G06F3/04845 , G06F3/1454 , G06F17/30056 , G06F2203/04803 , G06F2203/04806 , G06Q10/10 , H04L12/1813 , H04L12/1822 , H04L12/1827 , H04L65/403 , H04M2250/62 , H04N7/15
摘要： An information processing system and a method for operating same are provided. The information processing system includes a first information processing apparatus and a second information processing apparatus. The first information processing apparatus is configured to display a first synchronous image in a first window, the first window having an operation right. The second information processing apparatus has a synchronous state or an asynchronous state. The second information processing apparatus is configured to: display a second synchronous image; in response to a first request, switch from the synchronous state to the asynchronous state; and in response to a second request, switch from the asynchronous state to the synchronous state.
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公开(公告)号：US09627198B2
公开(公告)日：2017-04-18
申请号：US12894791
申请日：2010-09-30
IPC分类号： H01L21/00 , H01L21/84 , H01L21/02 , H01L29/786 , H01L27/12
CPC分类号： H01L21/02554 , G02F1/1368 , G02F1/167 , H01L21/02164 , H01L21/02172 , H01L21/02266 , H01L21/02422 , H01L21/02565 , H01L21/02631 , H01L21/477 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O) included in the oxide semiconductor layer is diffused into the silicon oxide layer. Further, a mixed region is provided between the oxide semiconductor layer and the silicon oxide layer. The mixed region includes oxygen, silicon, and at least one kind of metal element that is included in the oxide semiconductor.
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10.发明授权Electronic device including memory arrays with variable resistance storage elements arranged on different sides of a word line driving unit 有权电子设备包括具有布置在字线驱动单元的不同侧上的可变电阻存储元件的存储器阵列公开(公告)号：US09535834B2
公开(公告)日：2017-01-03
申请号：US14563645
申请日：2014-12-08
申请人： Dong-Keun Kim , Masahiro Takahashi , Tsuneo Inaba
发明人： Dong-Keun Kim , Masahiro Takahashi , Tsuneo Inaba
IPC分类号： G06F12/08 , G11C13/00 , G11C11/4099 , G11C11/16
CPC分类号： G11C13/004 , G06F3/061 , G06F3/0656 , G06F3/0679 , G06F12/0207 , G06F12/08 , G06F12/0875 , G06F2212/2024 , G06F2212/452 , G06F2212/60 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/4099 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0026 , G11C2013/0054 , G11C2213/79 , G11C2213/82
摘要： An electronic device includes a semiconductor device, wherein the semiconductor device includes: a word line driving unit for driving a plurality of word lines; a first cell array arranged at one side of the word line driving unit; a second cell array arranged at the other side of the word line driving unit; a bias voltage generation unit, arranged between the first cell array and the second cell array, for generating a bias voltage based on currents flowing through the first reference resistance element included in the first cell array and the second reference resistance element included in the second cell array; a first read control unit; and a second read control unit.
摘要翻译： 电子设备包括半导体器件，其中半导体器件包括：用于驱动多个字线的字线驱动单元; 布置在字线驱动单元的一侧的第一单元阵列; 布置在所述字线驱动单元的另一侧的第二单元阵列; 布置在所述第一单元阵列和所述第二单元阵列之间的偏置电压产生单元，用于基于流过所述第一单元阵列中包括的所述第一参考电阻元件的电流和所述第二单元中包括的所述第二参考电阻元件来产生偏置电压 阵列 第一读取控制单元; 和第二读取控制单元。
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