A memory includes an array of memory cells with each memory cell coupled to an associated pair of bit lines. Read control circuitry is configured to activate a number of addressed memory cells in order to couple each addressed memory cell to its associated pair of bit lines. Sense amplifier circuitry is then coupled to the bit lines to determine the data value stored in each addressed memory. In a speculative read mode of operation, the sense amplifier circuitry evaluates the differential signals. Error detection circuitry is then used to capture the differential signals on the associated pair of bit lines for each addressed memory cell, and to apply an error detection operation to determine if the differential signals as evaluated by the sense amplifier circuitry had not developed to the necessary degree and, in that event, an error signal is asserted.