发明授权
US08995202B2 Test flow to detect a latent leaky bit of a non-volatile memory
有权
测试流程以检测非易失性存储器的潜在泄漏位
- 专利标题： Test flow to detect a latent leaky bit of a non-volatile memory
- 专利标题（中）： 测试流程以检测非易失性存储器的潜在泄漏位
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申请号： US13476711申请日： 2012-05-21
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公开(公告)号： US08995202B2公开(公告)日： 2015-03-31
- 发明人: Fuchen Mu , Paul A Bogucki , Chen He
- 申请人： Fuchen Mu , Paul A Bogucki , Chen He
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C29/50
摘要：
A technique for detecting a leaky bit of a non-volatile memory includes erasing cells of a non-volatile memory. A bias stress is applied to the cells subsequent to the erasing. An erase verify operation is performed on the cells subsequent to the applying a bias stress to the cells. Finally, it is determined whether the cells pass or fail the erase verify operation based on whether respective threshold voltages of the cells are below an erase verify level.
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