发明授权
- 专利标题： Process for producing a nitride single crystal and apparatus therefor
- 专利标题（中）： 氮化物单晶的制造方法及其装置
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申请号： US12234786申请日： 2008-09-22
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公开(公告)号： US08999059B2公开(公告)日： 2015-04-07
- 发明人: Katsuhiro Imai , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
- 申请人： Katsuhiro Imai , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
- 申请人地址： JP Nagoya JP Suita
- 专利权人： NGK Insulators, Ltd.,Osaka University
- 当前专利权人： NGK Insulators, Ltd.,Osaka University
- 当前专利权人地址： JP Nagoya JP Suita
- 代理机构： Burr & Brown, PLLC
- 优先权： JP2006-82044 20060324
- 主分类号： C30B9/12
- IPC分类号： C30B9/12 ; C30B35/00 ; C30B9/00 ; C30B29/40
摘要：
A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.
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