Invention Grant
- Patent Title: Method for manufacturing a device on a substrate
- Patent Title (中): 在基板上制造器件的方法
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Application No.: US14092624Application Date: 2013-11-27
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Publication No.: US08999187B2Publication Date: 2015-04-07
- Inventor: Sandra Obernhuber , Christof Jalics , Joerg Adler , Uwe Hoeckele , Walter Preis , Reinhard Goellner , Tanja Ippisch , Patricia Nickut
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: C03C15/00
- IPC: C03C15/00 ; H01L41/297 ; H03H3/04

Abstract:
A method for manufacturing a device on a substrate includes forming a layer structure on the substrate, forming an auxiliary layer on the layer structure, forming a planarization layer on the auxiliary layer and on the substrate, exposing the auxiliary layer by a chemical mechanical polishing process and removing at least partly the auxiliary layer to form a planar surface of the remaining auxiliary layer or of the layer structure and the planarization layer. The chemical mechanical polishing process has a first removal rate with respect to the planarization layer and a second removal rate with respect to the auxiliary layer and the first removal rate is greater than the second removal rate.
Public/Granted literature
- US20140083973A1 Method for Manufacturing a Device on a Substrate Public/Granted day:2014-03-27
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