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公开(公告)号：US11527700B2
公开(公告)日：2022-12-13
申请号：US16722143
申请日：2019-12-20
发明人： You Qian , Joan Josep Giner De Haro , Rakesh Kumar
IPC分类号： H01L41/053 , H01L41/047 , H01L41/08 , H04R17/02 , H01L41/297
摘要： A microphone device may include: a substrate wafer, a support member bonded to a front surface of the substrate wafer, a single-crystal piezoelectric film provided over the support member, a top electrode and a bottom electrode. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The top electrode may be arranged adjacent to the first surface of the single-crystal piezoelectric film. The bottom electrode may be arranged adjacent to the second surface of the single-crystal piezoelectric film. The substrate wafer may have a through-hole formed therein. The through-hole of the substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.
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公开(公告)号：US11456409B2
公开(公告)日：2022-09-27
申请号：US16771190
申请日：2019-10-31
申请人： JILIN UNIVERSITY
发明人： Zhiwu Han , Kejun Wang , Honglie Song , Junqiu Zhang , Daobing Chen , Linpeng Liu , Binjie Zhang , Tao Sun , Dakai Wang , Changchao Zhang
IPC分类号： H01L41/312 , G01H11/08 , H01L41/297
摘要： A micro-vibration sensor and preparation method thereof. The method includes a metal sheet is coated with first curing material, and first curing material is cured into first cured layer; piezoelectric thin film element is attached to edge of first cured layer; one side, attached with piezoelectric thin film element, of first cured layer is vertically placed into second curing material, and second curing material is cured into second cured layer; and metal sheet is removed to obtain micro-vibration sensor. Due to fact that piezoelectric thin film element is arranged at a crack tip, during micro-vibration, stress in stress field of crack tip is rapidly increased due to crack stress deformation, and stress signal is efficiently converted into electric signal; and micro-vibration sensor has characteristics of being low in detection limit and high in accuracy.
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公开(公告)号：US11165011B2
公开(公告)日：2021-11-02
申请号：US16352770
申请日：2019-03-13
申请人： FUJIFILM Corporation
发明人： Takamichi Fujii , Takayuki Naono
IPC分类号： H01L41/083 , H01L41/047 , H01L41/09 , H01L41/297 , H01L41/316 , B06B1/06 , B81C1/00 , H01L41/08 , H01L41/27
摘要： Provided are a piezoelectric element having high stability, which operates with high efficiency, and a method for manufacturing the piezoelectric element. The piezoelectric element (10) has a laminate structure in which a first electrode (14), a first piezoelectric film (16), a second electrode (18), an adhesion layer (20), an interlayer (22), a third electrode (24), a second piezoelectric film (26), and a fourth electrode (28) are laminated in this order on a silicon substrate (12). The interlayer (22) is formed of a material different from that of the second electrode (18) and has a thickness of 0.4 μm to 10 μm. A device having a diaphragm structure or a cantilever structure is formed by removing a part of the silicon substrate (12). The respective layers (14 to 28) laminated on the silicon substrate (12) can be formed using a thin film formation method represented by a vapor phase epitaxial method.
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公开(公告)号：US10707406B2
公开(公告)日：2020-07-07
申请号：US15473661
申请日：2017-03-30
发明人： Korekiyo Ito
IPC分类号： H01L41/253 , H01L41/18 , H01L41/27 , H01L41/08 , H03H3/02 , H03H3/08 , H03H9/02 , H03H9/05 , H03H9/17 , H01L41/312 , H01L41/053 , H01L21/02 , H01L41/083 , H01L41/277 , H01L41/297 , H01L41/332 , H01L41/47 , B81C1/00
摘要： In a method of manufacturing a piezoelectric device, during an isolation formation step, a supporting substrate has a piezoelectric thin film formed on its front with a compressive stress film present on its back. The compressive stress film compresses the surface on a piezoelectric single crystal substrate side of the supporting substrate, and the piezoelectric thin film compresses the back of the supporting substrate, which is opposite to the surface on the piezoelectric single crystal substrate side. Thus, the compressive stress produced by the compressive stress film and that produced by the piezoelectric thin film are balanced in the supporting substrate, which causes the supporting substrate to be free of warpage and remain flat. A driving force that induces isolation in the isolation formation step is gasification of the implanted ionized element rather than the compressive stress to the isolation plane produced by the piezoelectric thin film.
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5.发明授权公开(公告)号：US10553777B2
公开(公告)日：2020-02-04
申请号：US15319597
申请日：2015-06-11
申请人： ULVAC, INC.
发明人： Hiroki Kobayashi , Mitsunori Henmi , Mitsutaka Hirose , Shinnosuke Mashima , Isao Kimura , Koukou Suu
IPC分类号： C23C14/34 , H01L41/083 , C23C14/58 , H01L41/047 , H01L41/297 , H01L41/314
摘要： A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.
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公开(公告)号：US20190362746A1
公开(公告)日：2019-11-28
申请号：US16538780
申请日：2019-08-12
发明人： Peter HAHN , Kuen Chee Ee , Long Zhang
IPC分类号： G11B5/48 , H01L41/33 , H01L41/297
摘要： A method of assembly a dual stage actuated suspension includes either applying an adhesive to a microactuator motor and then B-staging the adhesive, or applying an adhesive that has already been B-staged such as in film adhesive form to the microactuator then assembling the microactuator into a suspension and then finishing the adhesive cure. The adhesive can be applied to bulk piezoelectric material, with the adhesive being B-staged either before or after it is applied to the bulk piezoelectric material, and the piezoelectric material then singulated into a number of individual piezoelectric microactuators. The method allows greater control over how much adhesive is used, and greater control over spread of that adhesive and control over potential contamination, than traditional liquid epoxy dispense methods.
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公开(公告)号：US10424716B2
公开(公告)日：2019-09-24
申请号：US15379530
申请日：2016-12-15
发明人： Takashi Iwamoto
IPC分类号： H01L41/047 , H01L41/297 , H01L41/312 , H01L41/08 , H01L41/313 , H03H9/02 , H03H3/04 , H03H3/10 , H03H3/02
摘要： A method for producing a piezoelectric device includes a laminate formation step in which a laminate including a piezoelectric thin film, a support substrate, a metal layer, and a silicon oxide film respectively stacked on both of an upper surface and a lower surface of the metal layer interposed between the piezoelectric thin film and the support substrate is formed, a semi-conducting layer formation step in which a semi-conducting layer is formed by oxidizing the metal layer, and a functional electrode formation step in which a functional electrode that is electro-mechanically coupled to the piezoelectric thin film is formed on a first principal surface of the piezoelectric thin film. The semi-conducting layer is a layer composed of a mixture of a metal constituting the metal layer and an oxide thereof, or a layer composed of a semiconductor which is an oxide of a metal constituting the metal layer.
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公开(公告)号：US20190103549A1
公开(公告)日：2019-04-04
申请号：US16087431
申请日：2017-03-20
发明人： Mihai Duduta , David Clarke , Robert J. Wood
IPC分类号： H01L41/193 , H01L41/253 , H01L41/297 , H01L41/45 , H01L41/047 , H01B1/24 , C08L33/08 , C08L75/04 , C08L83/04 , C08K3/013
摘要： In some embodiments, a dielectric elastomer device may include at least first and second dielectric elastomer layers, and a first layer of conductive particles disposed between the first and second dielectric elastomer layers and forming a first electrode of the device, wherein portions of the second dielectric elastomer layer are directly bonded with portions of the first dielectric elastomer layer through the first layer of the conductive particles. The dielectric elastomer layer may, for example, comprise a cured acrylic elastomer precursor with an additive including urethane, polybutadiene, or silicone. Electrodes in different layers may be interconnected by infusing a liquid or semi-liquid conductive material in contact with each of a plurality of the electrodes of the actuator or sensor device, and solidifying the conductive material to form a conductive path that interconnects the plurality of electrodes.
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公开(公告)号：US10249813B2
公开(公告)日：2019-04-02
申请号：US15341587
申请日：2016-11-02
发明人： Naoya Ichimura
IPC分类号： H04R17/00 , H01L41/27 , H01L41/293 , H01L41/297 , H03H3/02 , H03H9/10 , H03H9/21 , H01L41/332
摘要： There is provided a method of manufacturing a piezoelectric vibrator element capable of preventing the piezoelectric vibrator element from being damaged when segmentallizing the piezoelectric vibrator element. The method of manufacturing a piezoelectric vibrator element includes the steps of providing the wafer with the piezoelectric plate and a frame part adapted to support the piezoelectric plate via a connection part, providing a pair of excitation electrodes to the piezoelectric plate, and forming a pair of extending electrodes extending from the piezoelectric plate to the frame part through the connection part and electrically connected respectively to the pair of excitation electrodes, and segmentallizing the piezoelectric plate by cutting the connection part. In the step of providing the pair of excitation electrodes, the pair of extending electrodes are formed on a side surface of the connection part.
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公开(公告)号：US10243019B2
公开(公告)日：2019-03-26
申请号：US15679084
申请日：2017-08-16
申请人： SK hynix Inc.
发明人： Hyung-Suk Lee , Do-Yeon Kim
IPC分类号： H01L27/22 , H01L43/02 , H01L43/08 , H01L43/12 , H01L45/00 , H01L41/297 , H01L41/27 , H01L41/20 , H01L41/22 , H01L41/12 , G11C13/00 , H01L27/24 , G11C11/16 , H01L43/10
摘要： This technology provides an electronic device. An electronic device in accordance with an implementation of this document may include a semiconductor memory for storing data, and the semiconductor memory may include a substrate; an interlayer dielectric layer over the substrate and patterned to include a contact hole; a lower contact structure formed over the substrate in the contact hole; and a variable resistance element formed over and electrically coupled to the lower contact structure, wherein the lower contact structure may include: a spacer formed on sidewalls of the contact hole in the interlayer dielectric layer and having a substantially uniform thickness along a direction perpendicular to a surface of the substrate; a contact plug filling a portion of the contact hole; and a contact pad formed over the contact plug and filling a remaining portion of the contact hole.
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