发明授权
- 专利标题： Semiconductor device and method of manufacturing semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12342153申请日： 2008-12-23
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公开(公告)号： US08999818B2公开(公告)日： 2015-04-07
- 发明人: Hidekazu Takahashi , Daiki Yamada , Yohei Monma , Hiroki Adachi , Shunpei Yamazaki
- 申请人： Hidekazu Takahashi , Daiki Yamada , Yohei Monma , Hiroki Adachi , Shunpei Yamazaki
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2007-340013 20071228
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L27/146 ; H01L27/12
摘要：
A semiconductor element is formed on a first surface of the substrate. A resin layer is formed over a second surface of the substrate which is opposite to the first surface of the substrate and on a part of the side surface of the substrate. A step is formed on the side surface of the substrate. The width of the upper section of the substrate with a step is narrower than the lower section of the substrate with a step. Therefore, the substrate can also be a protrusion.
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