发明授权
US08999823B2 Semiconductor device, method for manufacturing same, and display device
有权
半导体装置及其制造方法以及显示装置
- 专利标题： Semiconductor device, method for manufacturing same, and display device
- 专利标题（中）： 半导体装置及其制造方法以及显示装置
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申请号： US13125865申请日： 2009-10-20
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公开(公告)号： US08999823B2公开(公告)日： 2015-04-07
- 发明人: Naoki Makita , Hiroshi Nakatsuji
- 申请人： Naoki Makita , Hiroshi Nakatsuji
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon & Vanderhye P.C.
- 优先权： JP2008-273525 20081023
- 国际申请： PCT/JP2009/005478 WO 20091020
- 国际公布： WO2010/047086 WO 20100429
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L27/146 ; G09G5/10 ; G06F3/042 ; H01L29/786
摘要：
A semiconductor device according to the present invention includes a thin-film transistor and a thin-film diode. The respective semiconductor layers and of the thin-film transistor and the thin-film diode are crystalline semiconductor layers that have been formed by crystallizing the same crystalline semiconductor film. Ridges have been formed on the surface of the semiconductor layer of the thin-film diode. And the semiconductor layer of the thin-film diode has a greater surface roughness than the semiconductor layer of the thin-film transistor.