发明授权
- 专利标题: Connection substrate
- 专利标题(中): 连接基板
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申请号: US13640395申请日: 2011-01-27
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公开(公告)号: US09000388B2公开(公告)日: 2015-04-07
- 发明人: Fumiyuki Tokura , Mitsutoshi Sugiya , Shigeru Suzuki , Takashi Tonbe
- 申请人: Fumiyuki Tokura , Mitsutoshi Sugiya , Shigeru Suzuki , Takashi Tonbe
- 申请人地址: JP Hamamatsu-shi, Shizuoka
- 专利权人: Hamamatsu Photonics K. K.
- 当前专利权人: Hamamatsu Photonics K. K.
- 当前专利权人地址: JP Hamamatsu-shi, Shizuoka
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JP2010-094234 20100415
- 国际申请: PCT/JP2011/051624 WO 20110127
- 国际公布: WO2011/129133 WO 20111020
- 主分类号: G01T1/20
- IPC分类号: G01T1/20 ; H01R13/02 ; H01R13/46 ; H01L27/146 ; H05K1/02 ; H05K1/11
摘要:
A connection substrate 13 includes a base material 130 formed by stacking a plurality of dielectric layers 130a to 130f and a plurality of through conductors 20 provided penetrating through the dielectric layers 130c to 130f adjacent to each other. A plurality of radiation shielding films 21a to 23a formed integrally with each of the plurality of through conductors 20 and separated from each other are provided at two or more interlayer parts in the dielectric layers 130c to 130f. A region PR1 of the radiation shielding film 21a (21b) formed integrally with one through conductor 20 in one interlayer part projected onto a virtual plane normal to a predetermined direction and a region of the radiation shielding film 22b or 22c (22c) formed integrally with another through conductor 20 in another interlayer part projected onto the virtual plane do not overlap each other. Accordingly, the readout circuits of an integrated circuit device can be protected from radiation, and an increase in parasitic capacitance can be suppressed.
公开/授权文献
- US20130032389A1 CONNECTION SUBSTRATE 公开/授权日:2013-02-07