Invention Grant
- Patent Title: Light emitting diode having heterogeneous protrusion structures
- Patent Title (中): 具有异质突起结构的发光二极管
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Application No.: US13679698Application Date: 2012-11-16
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Publication No.: US09000414B2Publication Date: 2015-04-07
- Inventor: Sang-Mook Kim , Jong-Hyeob Baek
- Applicant: Korea Photonics Technology Institute
- Applicant Address: KR Gwangju
- Assignee: Korea Photonics Technology Institute
- Current Assignee: Korea Photonics Technology Institute
- Current Assignee Address: KR Gwangju
- Agency: NSIP Law
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L29/22 ; H01L33/00 ; H01L33/22 ; H01L33/24
Abstract:
An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to outside is improved by forming depressions and prominences configured of heterogeneous materials different from each other before or in the middle of forming a semiconductor material on a substrate in order to improve the light extraction efficiency.
Public/Granted literature
- US20140138613A1 LIGHT EMITTING DIODE HAVING HETEROGENEOUS PROTRUSION STRUCTURES Public/Granted day:2014-05-22
Information query
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