发明授权
- 专利标题: Light emitting diode having heterogeneous protrusion structures
- 专利标题(中): 具有异质突起结构的发光二极管
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申请号: US13679698申请日: 2012-11-16
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公开(公告)号: US09000414B2公开(公告)日: 2015-04-07
- 发明人: Sang-Mook Kim , Jong-Hyeob Baek
- 申请人: Korea Photonics Technology Institute
- 申请人地址: KR Gwangju
- 专利权人: Korea Photonics Technology Institute
- 当前专利权人: Korea Photonics Technology Institute
- 当前专利权人地址: KR Gwangju
- 代理机构: NSIP Law
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109 ; H01L29/22 ; H01L33/00 ; H01L33/22 ; H01L33/24
摘要:
An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to outside is improved by forming depressions and prominences configured of heterogeneous materials different from each other before or in the middle of forming a semiconductor material on a substrate in order to improve the light extraction efficiency.
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