Invention Grant
- Patent Title: Electro-optical modulator
- Patent Title (中): 电光调制器
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Application No.: US13395329Application Date: 2010-06-08
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Publication No.: US09002144B2Publication Date: 2015-04-07
- Inventor: Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
- Applicant: Junichi Fujikata , Jun Ushida , Akio Toda , Motofumi Saitoh
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-209766 20090910
- International Application: PCT/JP2010/059675 WO 20100608
- International Announcement: WO2011/030593 WO 20110317
- Main IPC: G02F1/035
- IPC: G02F1/035 ; G02F1/225 ; G02F1/025 ; G02F1/015

Abstract:
A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.
Public/Granted literature
- US20120257850A1 ELECTRO-OPTICAL MODULATOR Public/Granted day:2012-10-11
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