公开(公告)号：US20110311178A1

公开(公告)日：2011-12-22

申请号：US13202680

申请日：2010-02-18

申请人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

发明人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC分类号： G02F1/025

CPC分类号： G02F1/025

摘要： The components are a lower clad layer (102), a first silicon layer (103) that is formed on the lower clad layer (102) as a single body made of silicon of a first conduction type and has a slab region (105) that is disposed at a core (104) and on both sides of the core (104) and connects to the core, a concave section (104a) that is formed in the top surface of the core (104), and a second silicon layer (109) of a second conduction type that is formed inside the concave section (104a) with an intervening dielectric layer (108) to fill the inside of the concave section (104a).

摘要翻译： 这些部件是下包层（102），第一硅层（103），其形成在下包层（102）上，作为由第一导电类型的硅制成的单体，并具有板区域（105） 设置在芯部（104）处并且在芯部（104）的两侧并且连接到芯部，形成在芯部（104）的顶表面中的凹部（104a）和第二硅层（ 109），其形成在所述凹部（104a）的内部，并具有填充所述凹部（104a）的内部的中间介电层（108）。

公开(公告)号：US09002144B2

公开(公告)日：2015-04-07

申请号：US13395329

申请日：2010-06-08

申请人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

发明人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC分类号： G02F1/035 ,  G02F1/225 ,  G02F1/025 ,  G02F1/015

CPC分类号： G02F1/2257 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/066 ,  G02F2201/07 ,  G02F2202/105

摘要： A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.

摘要翻译： 提供了一种小型化的低功率电光调制器，其实现了减少调制部分中的附加电阻和由电极同时引起的光损耗。 电光调制器包括通过电介质膜层叠具有与第一半导体层8上的第一半导体层8不同的导电类型的第二半导体层9形成的肋波导，并且半导体层8和9可连接到 分别经由高掺杂部分4和10的外部端子。 在具有电介质膜11的半导体层8和9的接触表面附近的区域中，通过来自外部端子的电信号累积，去除或反转自由载流子，并且由此使自由载流子的浓度 调制光信号的电场区域，使得可以调制光信号的相位。 半导体层8和9中的至少一个比层叠部分宽。 高度掺杂部分4和10中的至少一个形成在堆叠部分的外部。

公开(公告)号：US08483520B2

公开(公告)日：2013-07-09

申请号：US13202680

申请日：2010-02-18

申请人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

发明人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC分类号： G02F1/025

CPC分类号： G02F1/025

摘要： An optical modulation structure includes a lower cladding layer (102), a first silicon layer (103) integrally formed from silicon of a first conductivity type on the lower cladding layer (102) while including a core (104) and slab regions (105) arranged on both sides of the core (104) and connected to the core, a concave portion (104a) formed in an upper surface of the core (104), and a second silicon layer (109) of a second conductivity type formed on a dielectric layer (108) in the concave portion (104a) so as to fill the concave portion (104a).

摘要翻译： 光调制结构包括下包层（102），在下包层（102）上由第一导电类型的硅整体形成的第一硅层（103），同时包括芯（104）和板区（105） 布置在芯体（104）的两侧并连接到芯部，形成在芯部（104）的上表面中的凹部（104a）和形成在芯体（104）上的第二导电类型的第二硅层（109） 在凹部（104a）中的介电层（108），以填充凹部（104a）。

公开(公告)号：US20130064491A1

公开(公告)日：2013-03-14

申请号：US13582841

申请日：2011-03-01

申请人： Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

发明人： Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

IPC分类号： G02F1/035 ,  H01L21/02

CPC分类号： G02F1/035 ,  G02F1/025 ,  H01L21/02

摘要： To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (8) having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer (11) laid on first-conduction-type semiconductor layer (8), and semiconductor layer (9) laid on dielectric layer (11), having the width at the side opposite from dielectric layer (11) increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.

摘要翻译： 提供具有减小的尺寸和降低的功率消耗并且能够容易地连接到波导的光学调制器和制造光学调制器的方法。 光调制器至少具有肋状部分并掺杂成第一导电类型的半导体层（8），布置在第一导电型半导体层（8）上的电介质层（11）和半导体层 放置在电介质层（11）上的与介电层（11）相对的宽度相对于肋状部分的宽度增加并且掺杂成第二导电类型的放电层（9）。

公开(公告)号：US08873895B2

公开(公告)日：2014-10-28

申请号：US13582841

申请日：2011-03-01

申请人： Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

发明人： Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

IPC分类号： G02F1/035 ,  H01L21/02

CPC分类号： G02F1/035 ,  G02F1/025 ,  H01L21/02

摘要： To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (8) having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer (11) laid on first-conduction-type semiconductor layer (8), and semiconductor layer (9) laid on dielectric layer (11), having the width at the side opposite from dielectric layer (11) increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.

摘要翻译： 提供具有减小的尺寸和降低的功率消耗并且能够容易地连接到波导的光学调制器和制造光学调制器的方法。 光调制器至少具有肋状部分并掺杂成第一导电类型的半导体层（8），布置在第一导电型半导体层（8）上的电介质层（11）和半导体层 放置在电介质层（11）上的与介电层（11）相对的宽度相对于肋状部分的宽度增加并且掺杂成第二导电类型的放电层（9）。

公开(公告)号：US20120257850A1

公开(公告)日：2012-10-11

申请号：US13395329

申请日：2010-06-08

申请人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

发明人： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC分类号： G02F1/035

CPC分类号： G02F1/2257 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/066 ,  G02F2201/07 ,  G02F2202/105

摘要： A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.

摘要翻译： 提供了一种小型化的低功率电光调制器，其实现了减少调制部分中的附加电阻和由电极同时引起的光损耗。 电光调制器包括通过电介质膜层叠具有与第一半导体层8上的第一半导体层8不同的导电类型的第二半导体层9形成的肋波导，并且半导体层8和9可连接到 分别经由高掺杂部分4和10的外部端子。 在具有电介质膜11的半导体层8和9的接触表面附近的区域中，通过来自外部端子的电信号累积，去除或反转自由载流子，并且由此使自由载流子的浓度 调制光信号的电场区域，使得可以调制光信号的相位。 半导体层8和9中的至少一个比层叠部分宽。 高度掺杂部分4和10中的至少一个形成在堆叠部分的外部。

公开(公告)号：US07759744B2

公开(公告)日：2010-07-20

申请号：US11129440

申请日：2005-05-16

申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Masayuki Terai

发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Masayuki Terai

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  H01L23/62 ,  H01L27/10 ,  H01L29/73

CPC分类号： H01L29/517 ,  H01L21/823857 ,  H01L29/4916 ,  H01L29/513 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device 100 includes a silicon substrate 102, an N-type MOSFET 118 including a first high dielectric constant film 111 and a polycrystalline silicon film 114 on the silicon substrate 102, and a P-type MOSFET 120 including a second high dielectric constant film 12 and a polycrystalline silicon film 114 juxtaposed to N-type MOSFET 118 on the silicon substrate 102. The second high dielectric constant film 112 is formed to have the film thickness thinner than the film thickness of the first high dielectric constant film 111. The first high dielectric constant film 111 and the second high dielectric constant film 112 contains one or more element(s) selected from Hf and Zr.

摘要翻译： 半导体器件100包括硅衬底102，在硅衬底102上包括第一高介电常数膜111和多晶硅膜114的N型MOSFET 118和包括第二高介电常数膜的P型MOSFET 120 12和与硅衬底102上的N型MOSFET 118并列的多晶硅膜114.第二高介电常数膜112形成为具有比第一高介电常数膜111的膜厚薄的膜厚度。第一 高介电常数膜111和第二高介电常数膜112含有选自Hf和Zr的一种或多种元素。

公开(公告)号：US07238996B2

公开(公告)日：2007-07-03

申请号：US11129439

申请日：2005-05-16

申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Ayuka Tada

发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Ayuka Tada

IPC分类号： H01L29/70

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517

摘要： A semiconductor device 100 comprises a silicon substrate 102, an N-type MOSFET 118 including a high concentration-high dielectric constant film 108b formed on the silicon substrate 102 and a polycrystalline silicon film 114, and a P-type MOSFET 120 including a low concentration-high dielectric constant film 108a and a polycrystalline silicon film 114 formed on the semiconductor substrate 102 to be juxtaposed to the N-type MOSFET 118. The low concentration-high dielectric constant film 108a and the high concentration-high dielectric constant film 108b are composed of a material containing one or more element (s) selected from a group consisting of Hf and Zr. The concentration of the above-described metallic element contained in the low concentration-high dielectric constant film 108a is lower than that contained in the high concentration-high dielectric constant film 108b.

摘要翻译： 半导体器件100包括硅衬底102，包括形成在硅衬底102上的高浓度 - 高介电常数膜108b和多晶硅膜114的N型MOSFET 118以及包括低电平的P型MOSFET 120 浓度高介电常数膜108a和形成在半导体衬底102上并与N型MOSFET 118并置的多晶硅膜114。 低浓度 - 高介电常数膜108a和高浓度 - 高介电常数膜108b由含有选自Hf和Zr的一种或多种元素的材料构成。 包含在低浓度 - 高介电常数膜108a中的上述金属元素的浓度低于高浓度 - 高介电常数膜108b中包含的金属元素的浓度。

公开(公告)号：US06846743B2

公开(公告)日：2005-01-25

申请号：US10147977

申请日：2002-05-20

申请人： Kazuhiko Endo ,  Motofumi Saitoh

发明人： Kazuhiko Endo ,  Motofumi Saitoh

IPC分类号： C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  H01L21/283 ,  H01L21/285 ,  H01L21/314 ,  H01L21/3205 ,  H01L21/8242 ,  H01L23/52 ,  H01L27/108 ,  H01L29/78 ,  H01L21/44

CPC分类号： C23C16/45525 ,  C23C16/34 ,  C23C16/40 ,  C23C16/402 ,  C23C16/403 ,  C23C16/405 ,  C23C16/452 ,  C23C16/45536 ,  C23C16/45553 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a metal compound film includes alternate irradiation of an organometal compound and oxygen or nitrogen radicals to deposit monoatomic layers of the metal compound. The organometal compound includes zirconium, hafnium, lanthanide compounds. The resultant film includes little residual carbon and has excellent film characteristic with respect to leakage current.

摘要翻译： 形成金属化合物膜的方法包括有机金属化合物和氧或氮自由基的交替照射以沉积金属化合物的单原子层。 有机金属化合物包括锆，铪，镧系元素化合物。 所得到的膜包含很少的残余碳并且相对于漏电流具有优异的膜特性。

公开(公告)号：US20050263802A1

公开(公告)日：2005-12-01

申请号：US11129439

申请日：2005-05-16

申请人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Ayuka Tada

发明人： Naohiko Kimizuka ,  Kiyotaka Imai ,  Yuri Masuoka ,  Toshiyuki Iwamoto ,  Motofumi Saitoh ,  Hirohito Watanabe ,  Ayuka Tada

IPC分类号： H01L27/092 ,  H01L21/28 ,  H01L21/3115 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31155 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/517

摘要： A semiconductor device 100 comprises a silicon substrate 102, an N-type MOSFET 118 including a high concentration-high dielectric constant film 108b formed on the silicon substrate 102 and a polycrystalline silicon film 114, and a P-type MOSFET 120 including a low concentration-high dielectric constant film 108a and a polycrystalline silicon film 114 formed on the semiconductor substrate 102 to be juxtaposed to the N-type MOSFET 118. The low concentration-high dielectric constant film 108a and the high concentration-high dielectric constant film 108b are composed of a material containing one or more element (s) selected from a group consisting of Hf and Zr. The concentration of the above-described metallic element contained in the low concentration-high dielectric constant film 108a is lower than that contained in the high concentration-high dielectric constant film 108b.

摘要翻译： 半导体器件100包括硅衬底102，包括形成在硅衬底102上的高浓度 - 高介电常数膜108b和多晶硅膜114的N型MOSFET 118以及包括低电平的P型MOSFET 120 浓度高介电常数膜108a和形成在半导体衬底102上并与N型MOSFET 118并置的多晶硅膜114。 低浓度 - 高介电常数膜108a和高浓度 - 高介电常数膜108b由含有选自Hf和Zr的一种或多种元素的材料构成。 包含在低浓度 - 高介电常数膜108a中的上述金属元素的浓度低于高浓度 - 高介电常数膜108b中包含的金属元素的浓度。