Invention Grant
- Patent Title: Reference frequency setting method, memory controller, and flash memory storage apparatus
- Patent Title (中): 参考频率设定方法，存储控制器和闪存存储装置
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Application No.: US13104009Application Date: 2011-05-09
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Publication No.: US09003100B2Publication Date: 2015-04-07
- Inventor: Chih-Ming Chen , An-Chung Chen , Wen-Lung Cheng
- Applicant: Chih-Ming Chen , An-Chung Chen , Wen-Lung Cheng
- Applicant Address: TW Miaoli
- Assignee: Phison Electronics Corp.
- Current Assignee: Phison Electronics Corp.
- Current Assignee Address: TW Miaoli
- Agency: Jianq Chyun IP Office
- Priority: TW100111292A 20110331
- Main IPC: G06F1/08
- IPC: G06F1/08 ; G11C16/20 ; G06F1/04 ; G06F3/06 ; G11C7/22
Abstract:
A reference frequency setting method of a flash memory storage apparatus is provided. The flash memory storage apparatus includes a flash memory module, a storage unit, and an oscillator circuit without a crystal. The reference frequency setting method includes following steps. Whether a setting code is stored in the flash memory module or the storage unit is determined, wherein the setting code includes information of a reference frequency. If the setting code is stored in the flash memory module, the setting code is read to allow the oscillator circuit to generate the reference frequency according to the setting code. A memory controller and a flash memory storage apparatus using the reference frequency setting method are also provided.
Public/Granted literature
- US20120254510A1 REFERENCE FREQUENCY SETTING METHOD, MEMORY CONTROLLER, AND FLASH MEMORY STORAGE APPARATUS Public/Granted day:2012-10-04
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