Invention Grant
US09003265B2 Method for processing a non-volatile memory, in particular a memory of the EEPROM type, for the storage then the extraction of information, and corresponding memory device
有权
用于处理非易失性存储器的方法,特别是EEPROM类型的存储器,用于存储然后提取信息,以及相应的存储器件
- Patent Title: Method for processing a non-volatile memory, in particular a memory of the EEPROM type, for the storage then the extraction of information, and corresponding memory device
- Patent Title (中): 用于处理非易失性存储器的方法,特别是EEPROM类型的存储器,用于存储然后提取信息,以及相应的存储器件
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Application No.: US13897940Application Date: 2013-05-20
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Publication No.: US09003265B2Publication Date: 2015-04-07
- Inventor: Francois Tailliet
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater & Matsil, L.L.P.
- Priority: FR1254582 20120521
- Main IPC: G06F11/10
- IPC: G06F11/10

Abstract:
Method for processing a non-volatile memory designed to store words containing data bits and control bits allowing an error correction with an error correction code, the method comprising the storage of information in the memory plane comprising an operation for writing in the memory plane at least one digital word modified with respect to at least one initial digital word not having any erroneous bit, said at least one modified digital word containing a bit having a modified value with respect to the value of this bit in said at least one initial digital word, the other bits of the modified digital word having values identical to those of these same bits in the initial digital word, the position of the modified bit in said at least one modified digital word defining the value of the digital information.
Public/Granted literature
Information query