发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12943558申请日： 2010-11-10
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公开(公告)号： US09006729B2公开(公告)日： 2015-04-14
- 发明人: Kengo Akimoto , Junichiro Sakata , Yoshiaki Oikawa , Shunpei Yamazaki
- 申请人： Kengo Akimoto , Junichiro Sakata , Yoshiaki Oikawa , Shunpei Yamazaki
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2009-259859 20091113
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/12 ; H01L29/786 ; H01L29/45
摘要：
It is an object to provide a method for manufacturing a highly reliable semiconductor device having a thin film transistor formed using an oxide semiconductor and having stable electric characteristics. The semiconductor device includes an oxide semiconductor film overlapping with a gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode which are in contact with the oxide semiconductor film. The source electrode and the drain electrode include a mixture, metal compound, or alloy containing one or more of a metal with a low electronegativity such as titanium, magnesium, yttrium, aluminum, tungsten, and molybdenum. The concentration of hydrogen in the source electrode and the drain electrode is 1.2 times, preferably 5 times or more as high as that of hydrogen in the oxide semiconductor film.
公开/授权文献
- US20110114942A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2011-05-19
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