发明授权
- 专利标题： Aligned gate-all-around structure
- 专利标题（中）： 对齐门全面结构
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申请号： US13594190申请日： 2012-08-24
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公开(公告)号： US09006829B2公开(公告)日： 2015-04-14
- 发明人: Jean-Pierre Colinge , Kuo-Cheng Ching , Zhiqiang Wu
- 申请人： Jean-Pierre Colinge , Kuo-Cheng Ching , Zhiqiang Wu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/423 ; H01L29/786 ; H01L29/165 ; H01L29/66
摘要：
Among other things, a semiconductor device comprising an aligned gate and a method for forming the semiconductor device are provided. The semiconductor device comprises a gate formed according to a multi-gate structure, such as a gate-all-around structure. A first gate portion of the gate is formed above a first channel of the semiconductor device. A second gate portion of the gate is formed below the first channel, and is aligned with the first gate portion. In an example of forming the gate, a cavity is etched within a semiconductor layer formed above a substrate. A dielectric layer is formed around at least some of the cavity to define a region of the cavity within which the second gate portion is to be formed in a self-aligned manner with the first gate portion. In this way, the semiconductor device comprises a first gate portion aligned with a second gate portion.
公开/授权文献
- US20140054724A1 ALIGNED GATE-ALL-AROUND STRUCTURE 公开/授权日：2014-02-27
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